SPICE-aided modeling of high-voltage silicon carbide JFETs

Bargieł, Kamil; Zarębski, J.; Bisewski, D.

doi:10.1088/1757-899x/104/1/012014

Cited by 6 publications

(3 citation statements)

References 1 publication

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“…Diodes D 1 and D 2 describe currents of the gate-source and the gate-drain p-n junctions, respectively. An extended description of the static S-H model is given for instance in [20] or is available in the SPICE user manual [12].…”

Section: The Shichman-hodges Model Formmentioning

confidence: 99%

“…In the case of JFET characteristics modelling, a Shichman-Hodges (S-H) model is used [12]. Recently, a successful attempt at modeling the static characteristics and parameters of SiC-JFETs using the S-H model have been reported [19,20]. On the other hand, selected aspects of modelling dynamic characteristics of JFETs were presented in [8][9][10][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

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Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

2020

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The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

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Section: The Shichman-hodges Model Formmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

2020

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“…In order to perform reliable simulations of an electronic circuit, proper software and accurate models of all electronic components included in this circuit are indispensable. One of the most popular software for a computer analysis of electronic and power electronic circuits is SPICE [2,[4][5][6][7][8][9][10]. In this software, models of many semiconductor devices, including a model of the IGBT, are built-in.…”

Section: Introductionmentioning

confidence: 99%

Modelling a Switching Process of IGBTs with Influence of Temperature Taken into Account

Górecki¹,

Górecki²

2019

Energies

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In this article the problem of modelling a switching process of Insulated Gate Bipolar Transistors (IGBTs) in the SPICE software is considered. The new form of the considered transistor model is presented. The model includes controlled voltage and current sources, resistors and voltage sources. In the model, influence of temperature on dc and dynamic characteristics of the IGBT is taken into account. A detailed description of the dynamic part of this model is included in the article and some results of experimental verification are shown. Verification is performed for a transistor IRG4PC40UD by International Rectifier. The presented results of computations and measurements show clearly influence of temperature on on-time and off-time, and additionally switching energy losses are observed. Moreover, the results of investigations performed with the use of the new model are compared to the results of computations performed with classical models of the considered device given in the literature. It is proved that the new model makes it possible to obtain a better match to the results of measurements than the considered models described in the literature.

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Measurements and calculations of capacitances of BJT and SJT made of silicon carbide

Szelągowska

Zarębski

2018

ITM Web Conf.

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In the paper the results of capacitance-voltage (C-V) characteristics measurements of the current controlled BJT and SJT transistors were presented, for which a programmable measuring system manufactured by Keithley was used. The results of measurements was compared with results of the calculations obtained by using the commonly used Gummel-Poon model. For comparison, the results of the measurements found in the literature and in the datasheets of the considered devices were presented as well. The temperature impact on the shape of the considered characteristics was also investigated.

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SPICE-aided modeling of high-voltage silicon carbide JFETs

Cited by 6 publications

References 1 publication

Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Modelling a Switching Process of IGBTs with Influence of Temperature Taken into Account

Measurements and calculations of capacitances of BJT and SJT made of silicon carbide

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