2019
DOI: 10.1016/j.vacuum.2019.01.022
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Stability enhancement of GaInP/GaAs/Ge triple-junction solar cells using Al2O3 moisture-barrier layer

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Cited by 8 publications
(9 citation statements)
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“…Figure c compares the reflectance for solar cells with and without the Al 2 O 3 /SiO 2 encapsulation layer that is evaluated using the finite difference time domain (FDTD) technique and experimental measurements. Since Al 2 O 3 (50 nm) deposited by ALD acts as a reasonable moisture barrier, the SiO 2 thickness (44 nm) was optimized through FDTD simulation. As seen in the experimental measurements using a UV–vis–NIR spectrophotometer, solar cells with an Al 2 O 3 /SiO 2 encapsulation layer reflect less light than those without an Al 2 O 3 /SiO 2 encapsulation layer.…”
Section: Resultsmentioning
confidence: 99%
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“…Figure c compares the reflectance for solar cells with and without the Al 2 O 3 /SiO 2 encapsulation layer that is evaluated using the finite difference time domain (FDTD) technique and experimental measurements. Since Al 2 O 3 (50 nm) deposited by ALD acts as a reasonable moisture barrier, the SiO 2 thickness (44 nm) was optimized through FDTD simulation. As seen in the experimental measurements using a UV–vis–NIR spectrophotometer, solar cells with an Al 2 O 3 /SiO 2 encapsulation layer reflect less light than those without an Al 2 O 3 /SiO 2 encapsulation layer.…”
Section: Resultsmentioning
confidence: 99%
“…In contrast, solar cells with the Al 2 O 3 /SiO 2 encapsulation layer are observed to be stable during the test. The degradation of solar cells resulting from moisture is closely related to shunt paths. , We use the Al 2 O 3 /SiO 2 encapsulation layer as a moisture barrier, which prevents the degradation of solar cells.…”
Section: Resultsmentioning
confidence: 99%
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“…Сегодня среди фотопреобразователей солнечной энергии наибольшим КПД в промышленном производстве обладают многопереходные (МП) солнечные элементы (СЭ) GaInP/Ga(In)As/Ge c тремя фотоактивными p−n-переходами, выполненными на основе согласованных по параметру решетки материалов Ga 0.51 In 0.49 P, Ga 0.99 In 0.01 As и Ge и соединяющих их встречно включенных n ++ −p ++ -туннельных диодов (ТД) [1][2][3][4][5][6][7]. При этом лабораторный рекорд эффективности ∼ 46% (AM1.5D) был достигнут для четырехпереходного СЭ [8].…”
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