Stability of zinc nitride thin-film transistors under positive and negative bias stress

Dominguez, Miguel A.; Pau, J. L.; Redondo-Cubero, A.

doi:10.1016/j.sse.2020.107841

Cited by 5 publications

(5 citation statements)

References 26 publications

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“…13 This also led to increased research activity on Zn 3 N 2 itself, including first demonstrations of Zn 3 N 2 in the field of thin film transistors (TFTs). [14][15][16][17][18][19][20][21][22] Although some band-gap studies on Zn 3 N 2 estimated values of 2.9-3.4 eV, 14,16,23,24 most of the recent studies and theoretical calculations, including photoluminescence measurements, find values in the 0.8-1.5 eV range. 10,15,[25][26][27][28][29][30][31][32][33][34][35][36][37][38] The reason for this large discrepancy lies probably in the tendency of Zn 3 N 2 to oxidize in ambient conditions, 34,39 which could lead to a strong overestimation of the band-gap energy, as masked by the presence of ZnO (with a band-gap in the order of 3.3 eV 40 ).…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties

John

Khalfioui

Deparis

et al. 2021

Journal of Applied Physics

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Single-crystalline Zn 3 N 2 thin films have been grown on MgO (100) and YSZ (100) substrates by plasma-assisted molecular beam epitaxy. Depending on the growth conditions the film orientation can be tuned from (100) to (111). For each orientation, x-ray diffraction and reflection high-energy electron diffraction are used to determine the epitaxial relationships and to quantify the structural quality. Using high temperature x-ray diffraction, the Zn 3 N 2 linear thermal expansion coefficient is measured with an average of (1.5 ± 0.1) • 10 -5 K -1 in the range of 300 to 700 K. The Zn 3 N 2 films are found to be systematically n-type and degenerate, with carrier concentrations of 10 19 to 10 21 cm -3 and electron mobilities ranging from 4 to 388 cm 2 V -1 s -1 . Low-temperature Hall effect measurements show that ionized impurity scattering is the main mechanism limiting the mobility. The large carrier densities lead to measured optical band-gaps in the 1.05 eV to 1.37 eV range due to Moss-Burstein band filling, with an extrapolated value of 0.99 eV for the actual band-gap energy.

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Section: Introductionmentioning

confidence: 99%

Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties

John

Khalfioui

Deparis

et al. 2021

Journal of Applied Physics

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“…Figure 2 shows the frequency dependence of the MOS capacitors comparing the initial characteristics and after 5V electrical stress during different times. It can be observed as a frequency dependence, or also called frequency dispersion, at the initial measurement due to interface states [5,19]. On the other hand, the electrical stress induce charge trapping at the dielectric-semiconductor interface (interface charge).…”

Section: Resultsmentioning

confidence: 99%

“…Currently, the stability of field-effect devices based on emerging technologies is one of the most demanding research issues in terms of performance [1][2][3][4][5]. Since solution-processed electronic devices are attracting much attention to enable low-cost flexible electronics, the reported studies of stability seem to be conceived with arbitrary conditions.…”

Section: Introductionmentioning

confidence: 99%

Effects of Electrical Stress in Solution-Processed Spin-On Glass Dielectric Films: Frequency Dependence

Obregon

Alcantara

Soto

et al. 2021

The 1st International Conference on Micromachines and Applications

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In this work, the effects of the frequency dependence of transparent dielectric based on Spin-on Glass (SOG) under electrical stress is presented. The SOG thin films were cured at 200 °C in ambient air. The capacitance-voltage and capacitance-frequency characteristics were measured in Metal-Oxide-Semiconductor (MOS) capacitors using the SOG thin film. In addition, electrical stress is applied to the MOS capacitors at different voltage values and during a long period of time. The results show, depending on the bias stress applied, a reversible interface charge contribution and an irreversible charge induced by interface states probably generated by the degradation of the film.

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Section: Introductionmentioning

confidence: 99%

“…Metal nitrides are a class of novel functional materials with many special physical and chemical characteristics, these materials have attracted great attention and have been used in various fields including electronics and optics. [1][2][3][4] Thereinto, gallium nitride (GaN) is a most popular third-generation semiconductor material along with silicon carbide (SiC), aluminum nitride (AlN), and zinc oxide (ZnO). [5][6][7] Due to its unique properties such as wide band gap (3.4 eV), high thermal conductivity, and low dielectric constant, GaN has found extensive applications in light emitting diodes, lithium-ion batteries, power transistors, etc.…”

Section: Introductionmentioning

confidence: 99%

Mesoporous Silica Supported Highly Dispersed GaN Catalysts Synthesized by Thermal Atomic Layer Deposition for Propane Dehydrogenation

Zhang

Hui

et al. 2022

ChemCatChem

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As a typical wide band gap semiconductor material, gallium nitride (GaN) has found extensive applications in electronic related fields. This material could also make a promising catalyst. However, due to the difficulty of synthesizing high surface area GaN, its applications in catalysis have been greatly constrained. In this work, we report a novel method of synthesizing high surface area GaN catalysts supported on mesoporous silica (MCM‐41) using thermal atomic layer deposition (ALD). Trimethyl gallium and ammonia were alternately dosed in the temperature range between 400–500 °C to generate nanoparticles of GaN on the support. Formation of highly dispersed GaN nanoparticles was confirmed and their structural and physiochemical properties were investigated. Structural characterization results reveal that amorphous GaN could be deposited on MCM‐41 at 400 °C while crystalline GaN could only be formed at temperatures≥500 °C and with multiple cycles of ALD. In propane dehydrogenation (PDH) reaction the ALD GaN/MCM‐41 catalysts demonstrated excellent activity and selectivity. The specific activity of amorphous GaN turned out to be better than crystalline GaN, probably due to the larger fraction of active species exposed on the surface. Density function theory calculation was used to analyze the catalytic process and mechanism of PDH on supported GaN. It was revealed that GaN was active in the cleavage of C−H bond in propane. Amorphous GaN facilitates the adsorption of propane, which could also contribute to the enhanced activity of amorphous GaN.

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Stability of zinc nitride thin-film transistors under positive and negative bias stress

Cited by 5 publications

References 26 publications

Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties

Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties

Effects of Electrical Stress in Solution-Processed Spin-On Glass Dielectric Films: Frequency Dependence

Mesoporous Silica Supported Highly Dispersed GaN Catalysts Synthesized by Thermal Atomic Layer Deposition for Propane Dehydrogenation

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