Double ferroelectric hysteresis ͑P-E͒ loops are observed in aged BiFeO 3 multiferroic ceramic at room temperature and are explained according to an aging effect driven by charged defects with high activation energy. The aged BiFeO 3 shows R3c defect symmetry and allows a nonzero charged defect-induced polarization ͑P D ͒ below the ferroelectric Curie temperature. This P D is strong enough to recover the switched 180°ferroelectric domains upon the removal of E, but it is rather weak to effectively switch back the 71°/109°ferroelectric domains. As a result, the traits of the double P-E loops weaken with increasing the maximum E from 121 to 167 kV/ cm. While there are many reports on the structural, dielectric, and ferroelectromagnetic properties of BiFeO 3 multiferroic ceramic in recent years, 1-4 few reports are made on the aging effect, particularly on the aging-induced double ferroelectric hysteresis effect. In ABO 3 -type ferroelectric ceramics, the observed double ferroelectric hysteresis ͑P-E͒ loops mainly result from antiferroelectric components, electric fieldinduced paraelectric-ferroelectric ͑PE-FE͒ phase transition near T C-FE , and/or an aging effect far below T C-FE . However, there is no direct indication ͑e.g., superhigh stress, supersmall crystal grain, excess doping, etc.͒ of the appearance of antiferroelectric components in BiFeO 3 .8 Besides, the double P-E loops reported so far in BaTiO 3 -and ͑BiNa͒TiO 3 -based ceramics are at temperatures near T C-FE , 9,10 yet those found in aged doped BaTiO 3 / ͑BaSr͒TiO 3 crystals or ceramics are far below T C-FE .11-14 These give essential evidences that aging may induce double P-E loops in BiFeO 3 at room temperature. In this letter, we explain the double P-E loops observed in the aged BiFeO 3 at room temperature according to a special aging effect adopted by Ren and co-workers.
11-14A rapid liquid-phase sintering technique was used to prepare single-phase BiFeO 3 ceramic.2,15 High-purity Bi 2 O 3 and Fe 2 O 3 powders of Ͻ1 m size were mixed thoroughly and pressed uniaxially into disk samples with a diameter of 5 mm and a thickness of 1.2 mm. The samples were sintered at 855°C for 20 min at high heating and cooling rates of 100 and 10°C/s, respectively.The crystal structure of the freshly sintered sample ͑de-noted as "fresh sample"͒ was examined by an x-ray diffractometer ͑Brucker D8 Advance System͒ with a 2 step size of 0.02°and at a scan rate of one step/4 s. Simulation of crystal structure based on the measured x-ray diffraction ͑XRD͒ data was performed using a Rietveld crystal structure refinement software ͑FULLPROF 2000͒. The fresh sample was thinned down to 0.4 mm thick, and silver paste was applied on its two major surfaces as electrodes. The ferroelectric hysteresis ͑P-E͒ loops of the fresh sample were measured with a standard Sawyer-Tower circuit at 100 Hz. The electric field dependence of leakage current density ͑J-E͒ of the sample was evaluated using a multimeter ͑Keithley 2000͒ and a highvoltage amplifier ͑Trek P0621P͒. The relative dielectri...