Standing wave reduction of positive and negative I-line resists

Grandpierre, A.G.; Schiwon, R.; Finger, F.; Schröder, U. Paul

doi:10.1117/12.596508

Cited by 4 publications

(2 citation statements)

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“…This interference pattern distributes power within the photoresist into vertically stacked planes of alternating high and low energy . From the previous work we can see that the presence of standing waves needs to meet the following conditions: monochromatic light source, the reflective substrate (polished silicon wafer or metal-coated wafer), no postexposure baking, and a film thickness of less than 500 nm. , Our experiments were carried out very well under all of the above conditions, and the nanotunnel structure was obtained after suitable development, which is in perfect accordance with the mathematical model of the standing waves . When laser light irradiates the thin resist film, the transmitted light will be reflected by the silicon wafer.…”

Section: Resultssupporting

confidence: 67%

Formation of Nanotunnels Inside a Resist Film in Laser Interference Lithography

Wei

Wang

2015

Langmuir

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A few kinds of 2-diazo-1-naphthoquinone-4-sulfonates of poly(4-hydroxylstyrene) were prepared to form one-component i-line photoresists. In the laser interference lithography experiments of some of the photoresists, nanotunnels were observed to be aligned in the interior of the resist film. The shape and size of the nanotunnels remain virtually unchanged even under an increased exposure dose, indicating that the exposure energy is confined within the tunnel space. The formation of the nanotunnels results from the effect of standing waves and the permeation of developer from the surface deep into the resist films.

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Section: Resultssupporting

confidence: 67%

Formation of Nanotunnels Inside a Resist Film in Laser Interference Lithography

Wei

Wang

2015

Langmuir

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“…Variations of critical track parameters can also result in CD mean instabilities [2]. Baking parameters are mainly set up to optimize resist profiles [3,4], but temperature deviations may also be of importance. Besides the influence of the lithography process, the local stack configuration, plus the wafer bow and local topography for example have a major effect on CD mean and CD repartition.…”

Section: Introductionmentioning

confidence: 99%

Critical dimension variations of I-line processes due to swing effects

et al. 2006

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As chip dimensions decrease, I-line processes remain of interest for most uncritical layers: they provide the needed performance at a low cost and high throughput. However the critical dimensions (CD) and overlay requirements for the newest technologies are much tighter than they used to be, reducing significantly the process windows. Sources of variations of CD range and CD mean should be well known and the process window set up so as to minimize the sensitivity to small variations.For lower resist thickness, although using partially dyed I-line resist, one may have to deal with huge swing effects. Resist thickness and stack variations are then the main contributors to the high CD distribution This article focuses on CD instabilities caused by resist thickness fluctuations in the case where a stack layer is subject to variations.The influence of resist thickness variations is first considered, pointing out the importance of thickness control methods. The real resist thickness repartition on stacked wafers depends not only on global coating uniformity but also on local topography. Some examples of resist repartition and its impact on CD-uniformity are provided. The added contributions of resist and stack to a global swing effect are then discussed on the basis of experimental data. Significant differences of swing behavior are experimentally observed between critical chip structures and the usually monitored PCI kerf structure. A simulation illustrates the effect of the local stack thickness and resist thickness and to better understand those differences, together with cross section thickness measurements. The choice of an appropriate CD control structure is finally dealt with.

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Nanolithography by elastomeric scattering mask: An application of photolithographic standing waves

Kostovski

Mitchell

Holland

et al. 2006

Applied Physics Letters

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An application is demonstrated for the much maligned standing wave in photolithography that is responsible for the sidewall corrugations in photoresist patterns. We demonstrate the realization of a polydimethylsiloxane (PDMS) scattering mask through the casting of these sidewall corrugations and their application as the masking components in an otherwise transparent bulk of PDMS. Photoresist structures with widths in the order of 80nm are realized by the application of this mask, demonstrating excellent correlation with the lateral depths of the sidewall corrugations. The continuity of the sidewall corrugations around corners makes both straight and curved lines realizable with equal simplicity.

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Standing wave reduction of positive and negative I-line resists

Cited by 4 publications

References 0 publications

Formation of Nanotunnels Inside a Resist Film in Laser Interference Lithography

Formation of Nanotunnels Inside a Resist Film in Laser Interference Lithography

Critical dimension variations of I-line processes due to swing effects

Nanolithography by elastomeric scattering mask: An application of photolithographic standing waves

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