Stark Tuning of the Silicon Vacancy in Silicon Carbide

Rühl, Maximilian; Bergmann, Lena; Krieger, Michael; Weber, Heiko B.

doi:10.1021/acs.nanolett.9b04419

Cited by 34 publications

(47 citation statements)

References 38 publications

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“…This corresponds to an electric dipole moment of 0.72 ± 0.02 Debye, in disagreement with the theoretical prediction of 0.2 Debye 45 . We note that a recent experimental study in V Si ensembles estimated the dipole moment to be 0.18 Debye 46 . Nevertheless, the widerange, high-resolution characterization of the Stark shift of single color centers presented in this work gives us confidence in the dipole moment magnitude we report.…”

Section: Continuous-wave Scattering Off a Modulated Two-level Systemmentioning

confidence: 57%

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

et al. 2020

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The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose the use of frequency-modulated optical transitions for spectral engineering of single photon emission. Using a scattering-matrix formalism, we find that a two-level system, when modulated faster than its optical lifetime, can be treated as a single-photon source with a widely reconfigurable photon spectrum that is amenable to standard numerical optimization techniques. To enable the experimental demonstration of this spectral control scheme, we investigate the Stark tuning properties of the silicon vacancy in silicon carbide, a color center with promise for optical quantum information processing technologies. We find that the silicon vacancy possesses excellent spectral stability and tuning characteristics, allowing us to probe its fast modulation regime, observe the theoretically-predicted two-photon correlations, and demonstrate spectral engineering. Our results suggest that frequency modulation is a powerful technique for the generation of new light states with unprecedented control over the spectral and temporal properties of single photons.

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Section: Continuous-wave Scattering Off a Modulated Two-level Systemmentioning

confidence: 57%

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

et al. 2020

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“…Although this does not present a significant influence for HOM experiments, it may be even further suppressed with improved crystal growth and associated annealing procedures to reduce charge traps. Alternatively, electronic device structures might be promising to control the charge environment 12,[49][50][51] .…”

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confidence: 99%

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

et al. 2020

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Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms remains a challenge. Here, we investigate the silicon vacancy centre in silicon carbide and demonstrate controlled emission of indistinguishable and distinguishable photons via coherent spin manipulation. Using strong off-resonant excitation and collecting zero-phonon line photons, we show a two-photon interference contrast close to 90% in Hong-Ou-Mandel type experiments. Further, we exploit the system's intimate spin-photon relation to spin-control the colour and indistinguishability of consecutively emitted photons. Our results provide a deep insight into the system's spin-phonon-photon physics and underline the potential of the industrially compatible silicon carbide platform for measurement-based entanglement distribution and photonic cluster state generation. Additional coupling to quantum registers based on individual nuclear spins would further allow for high-level network-relevant quantum information processing, such as error correction and entanglement purification.

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“…Recently, spectral tuning of single-photon emission via the Stark effect was demonstrated for the V Si 7 , 8 and divacancy (V C V Si ) 9 , 10 in 4H-SiC, via fabrication of Schottky barrier or p-i-n diodes. Electrical tuning allows the inhomogeneous broadening of SPEs to be circumvented and provides a means to tailor the photon energy to each specific application.…”

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confidence: 99%

Strain Modulation of Si Vacancy Emission from SiC Micro- and Nanoparticles

et al. 2020

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Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission shifting and waveguiding. Specifically, emission from 6H-SiC micro-and nanoparticles ranging from 100 nm to 5 μm in size is collected using cathodoluminescence (CL), and we monitor signals attributed to the Si vacancy (VSi) as a function of its location. Clear shifts in the emission wavelength are found for emitters localized in the particle center and at the edges. By comparing spatial CL maps with strain analysis carried out in transmission electron microscopy, we attribute the emission shifts to compressive strain of 2-3% along the particle a-direction. Thus, embedding VSi qubit defects within SiC nanoparticles offers an interesting and versatile opportunity to tune single-photon emission energies, while simultaneously ensuring ease of addressability via a self-assembled SiC nanoparticle matrix.

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Stark Tuning of the Silicon Vacancy in Silicon Carbide

Cited by 34 publications

References 38 publications

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

Strain Modulation of Si Vacancy Emission from SiC Micro- and Nanoparticles

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