Static and dynamic electrical study of a-SiC:H based p–i–n structure, effect of hydrogen dilution of the intrinsic layer

Abdelkrim, M.; Loulou, M.; Gharbi, R.; Fathallah, M.; Pirri, Candido Fabrizio; Tresso, Elena Maria

doi:10.1016/j.sse.2006.11.015

Cited by 4 publications

(3 citation statements)

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“…Table1 gives the experimental data of the amorphous p-i-n solar cell prepared without hydrogen dilution (L938) [6]. Figure 4 gives the quantum efficiency variation versus wavelength for L939 solar cell obtained by simulation and experimental procedure.…”

Section: Resultsmentioning

confidence: 99%

“…Figure 5 shows the standard electronic density of states used in (a-SiC:H) material. The increase of carrier trapped in states located in the intrinsic layer, increases the parasite capacity live of the cell what is especially, for low frequencies, responsible of photo-generated current decrease [6]. Levels of energies are associated to these states located in the gap.…”

Section: Resultsmentioning

confidence: 99%

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Effect of defects on the efficiency of a-SiC:H p-i-n based solar cells

Azizi

Torchani

Karoui

et al. 2013

2013 International Conference on Electrical Engineering and Software Applications

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In amorphous hydrogenated silicon carbide (a-SiC:H) based p-in type solar cells, the device performance is limited by various factors. Most important of which is defects in the i-layer and particularly in the p/i interface. We performed I-V measurements on amorphous solar cells in the structure p(a-SiC :H)/i(a-SiC :H)/n(a-Si :H) at AM1.5. All parameters are determined such as efficiency and filling factor. In the dark, the static and dynamic parameters of diode are deduced. Defects in the intrinsic layer are evaluated by photothermal deflexion spectroscopy technique. All the measured parameters are used by the solar cell capacitance simulator (SCAPS 3.2). The structure of solar cells and the experimental conditions were introduced in simulator. The experimental I-V and spectral response characteristics were correlated to the simulated ones. The simulation shows that increase in defects density, reduces the electrical parameters of amorphous solar cells. The effect of the gap value is more important to define the efficiency of the solar cell made by a-SiC:H materials.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Effect of defects on the efficiency of a-SiC:H p-i-n based solar cells

Azizi

Torchani

Karoui

et al. 2013

2013 International Conference on Electrical Engineering and Software Applications

Self Cite

View full text Add to dashboard Cite

show abstract

“…20 Many studies have reported the practical applications of a-Si and Si x C 1Àx hybrid PVSCs. [21][22][23][24] However, few reports have emphasized all Si x C 1Àx -based PVSCs. 6,20 Gao et al applied Si x C 1Àx -based n-i-p junction PVSCs as semitransparent solar cells in optical transmittance modulators, but reported a <1% conversion efficiency.…”

Section: Introductionmentioning

confidence: 99%