Strain and Stability of Ultrathin Ge Layers in Si/Ge/Si Axial Heterojunction Nanowires

Wen, Cheng‐Yen; Reuter, M. C.; Su, Dong; Stach, Eric A.; Ross, Frances M.

doi:10.1021/nl504241g

Cited by 28 publications

(24 citation statements)

References 44 publications

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“…The results obtained in this work for 0001 -oriented (In,Ga)N/GaN NWs are also valid for other axial semiconductor NW heterostructures, including all 0001 -oriented wurtzite NWs, but also 111 -oriented NWs composed of diamond and zincblende materials such as Ge/Si [33][34][35], Si/GaP [36], InAs/InP [37,38], CdTe/ZnTe [39]. For all these materials systems, the strain anomaly investigated in the present work is not only of academic interest, but has potentially far-reaching consequences for their application in electronic and optoelectronic devices.…”

supporting

confidence: 69%

Counterintuitive strain distribution in axial (In,Ga)N/GaN nanowires

Krause

Hanke

Brandt

et al. 2016

Applied Physics Letters

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We study the three-dimensional deformation field induced by an axial (In,Ga)N segment in a GaN nanowire. Using the finite element method within the framework of linear elasticity theory, we study the dependence of the strain field on the ratio of segment length and nanowire radius. Contrary to intuition, the out-of-planecomponent ε zz of the elastic strain tensor is found to assume large negative values for a length-to-radius ratio close to one. We show that this unexpected effect is a direct consequence of the deformation of the nanowire at the free sidewalls and the associated large shear strain components. Simulated reciprocal space maps of a single (In,Ga)N/GaN nanowire demonstrate that nanofocus x-ray diffraction is a suitable technique to assess this peculiar strain state experimentally.

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supporting

confidence: 69%

Counterintuitive strain distribution in axial (In,Ga)N/GaN nanowires

Krause

Hanke

Brandt

et al. 2016

Applied Physics Letters

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“…4 Using a modified growth procedure, interfaces with a high compressive stress were also achieved. 5 High and localized strains also exist in various mismatched heterostructures, thanks to the same interfacial configuration as here ([InAs/GaSb] 6 and [ZnTe/CdSe] 7 ) or to a nanowire geometry [8][9][10] for instance. In this article, the elastic properties of [InAs/AlSb] heterostructures are theoretically investigated with a special emphasis on the perfect interfaces of AlAs-or InSb-type.…”

mentioning

confidence: 67%

Elastic properties of AlAs-like and InSb-like strained interfaces in [InAs/AlSb] heterostructures

Claveau

Vallet

Tang

et al. 2016

Applied Physics Letters

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Elastic properties of [InAs/AlSb] heterostructures coherently grown on a (001) InAs substrate are investigated by the density functional theory and compared to the prediction of the linear elasticity theory. The stress-strain curves of the four involved binaries (InAs, AlAs, AlSb, and InSb) are first studied: a significant deviation to the linear elasticity theory is observed for strain above 2.5% (in absolute value). Nevertheless, the relationship between the out-of-plane and in-plane strains is in a good agreement with the prediction of the linear elasticity theory. In the heterostructures, highly strained perfect AlAs-like and InSb-like interfaces are examined. The interfacial strains calculated using the density functional theory are in a surprisingly good agreement with the prediction of the linear elasticity theory. The reduction of the layer thickness to the thinnest possible InAs or AlSb layers while keeping perfect interfaces does not change these conclusions.

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“…The interdiffusion can be because of high strains and concentration gradient. 26,31 The effect of RTA, for instance is clearly observed on the evolution of strain as a function of annealing time and temperature. For increasing annealing temperature and dwell time, signicant strain relaxation was attained in the Si-Ge layer.…”

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confidence: 99%