Strain relaxation processes in strained-Si layer on SiGe-on-insulator substrates

Hirashita, N.; Sugiyama, N.; Toyoda, Eiji; Takagi, Shinichi

doi:10.1016/j.tsf.2005.08.398

Cited by 5 publications

(3 citation statements)

References 12 publications

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“…Although the details of nucleation of 90 • partials have not been clarified yet, our previous work [20] has pointed out the presence of heterogeneous nucleation sites. The present results on the strong dependence of the ratio of 90 • partials on x eff or Ge composition, shown in figure 5(a), indicate that the nucleation rate of 90 • partials increases with increasing x eff or Ge composition.…”

Section: Misfit Strain Relaxationmentioning

confidence: 97%

Strain relaxation in strained-Si layers on SiGe-on-insulator substrates

Hirashita

Moriyama

Toyoda

et al. 2006

Semicond. Sci. Technol.

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Misfit strain relaxation in tensile-strained Si grown at 600 • C on (0 0 1) SiGe-on-insulator substrates is experimentally studied for a tensile strain range between 0.4 and 1.2%. The critical thickness is found to be rather thinner than Houghton's critical thickness for a compressively-mismatched SiGe/Si(0 0 1) system. The thinner critical thickness in tensile-strained Si is attributed to the fact that the stress-relieving misfit dislocations are 90 • partial dislocations, instead of 60 • misfit dislocations for the compressive SiGe/Si(0 0 1) system. With increasing strained-Si layer thickness thicker than the critical thickness, 60 • misfit dislocation is found to be increasingly formed but the strain relaxation is sluggish. For a supercritical thickness ten times thicker than the critical thickness the tensile strain mostly remains. The initial strain relaxation is discussed in terms of the misfit dislocation morphology.

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Section: Misfit Strain Relaxationmentioning

confidence: 97%

Strain relaxation in strained-Si layers on SiGe-on-insulator substrates

Hirashita

Moriyama

Toyoda

et al. 2006

Semicond. Sci. Technol.

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“…Figure 6 shows the mean line area density (cm -2 ) as well as the mean line linear density (cm -1 ) as a function of the thickness of sSi grown on 40% Ge content VS. The nature of these lines and their formation is still under discussion (15,16,17,18). However, some stacking faults have been observed in a 12 nm sSi layer on Si 0.6 Ge 0.4 by transmission electron microscopy (TEM).…”

Section: Epitaxial Growth Of Highly Strained Simentioning

confidence: 99%

Highly-Strained Silicon-On-Insulator Development

et al. 2006

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Bi-axially highly-strained Silicon-On-Insulator (sSOI) substrates with a tensile stress up to 2.5 GPa have been obtained by Smart CutTM technology. Thin strained silicon (sSi) layers epitaxially grown on relaxed Si0.6Ge0.4 virtual substrates (VS) were used as starting materials. The threading dislocation density in those sSi layers was in the low 105 cm-2. Some stacking faults were also present in those highly strained Si films. The evolution of this linear defect density was characterized as a function of the sSi thickness by Secco etch. 2.5 GPa sSOI wafers have been demonstrated in 200 mm diameter. Stress uniformity σ equal to 1.14% and 2 nm thickness range has been obtained for 8 nm thick sSi layers.

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“…Most experimental reports show the effect of post epitaxial growth process so that the relaxation data will not be influenced by the initial interface conditions. (14)(15)(16)(17) Using a dry cleaning process, we show that the strain relaxation on SiGe films can be controlled beyond a critical thickness. In this paper we discuss the effects of thickness, growth rate, dopant concentration and surface cleaning on strain relaxation on the SiGe films.…”

Section: Introductionmentioning

confidence: 99%