2018
DOI: 10.1109/tcsii.2017.2685563
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Stress Relaxed Multiple Output High-Voltage Level Shifter

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Cited by 15 publications
(4 citation statements)
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“…14(b). To generate the control signal that swings between both 1 and 2 V DDH , stress relaxed multiple output high-voltage level shifter proposed in [30] is used. In the power stage, transistors M 3−4 , M 5−6 , and M 7−8 are stacked in each stage to reduce the stress of each thick-oxide transistor to not exceed 1 V DDH (unlike [31], which requires stress-tolerant diodes).…”
Section: On-chip Power Management Unitmentioning
confidence: 99%
“…14(b). To generate the control signal that swings between both 1 and 2 V DDH , stress relaxed multiple output high-voltage level shifter proposed in [30] is used. In the power stage, transistors M 3−4 , M 5−6 , and M 7−8 are stacked in each stage to reduce the stress of each thick-oxide transistor to not exceed 1 V DDH (unlike [31], which requires stress-tolerant diodes).…”
Section: On-chip Power Management Unitmentioning
confidence: 99%
“…The driver circuit needs to provide the operating voltage of the CIM unit in the CIM array so that the CIM unit can complete the processes of writing, reading and erasing [14][15][16]. As shown in Figure 1, the CIM array driver circuit can be divided into two critical modules according to its function: high voltage control circuit and a charge pump [17]. According to the characteristics of floating gate devices, high voltage is required to switch the working mode, and the driver circuit is used to control the port potential of the CIM array to complete the memory and calculation of floating gate devices.…”
Section: Introductionmentioning
confidence: 99%
“…Matsuzuka et al 11 use a pre-amplifier comprising a logic error correction circuit which can generating an operation current only when the logic levels of the input and output do not correspond. Literature [14][15][16][17][18][19] are presented on the basis of DCVS architecture. Lanuzza et al 14 combine the multi-threshold CMOS design technique along with novel topological strategies to achieve fast response and low energy consumption.…”
Section: Introductionmentioning
confidence: 99%