2014
DOI: 10.1134/s0021364014130062
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Structural and electrical characteristics of a hyperdoped silicon surface layer with deep donor sulfur states

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Cited by 8 publications
(16 citation statements)
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“…This implies that elemental S is dissolved in the amorphous Si "fingers" rather than sedimented on their nanocrystalline boundaries, which is in the former case favorable for the formation of S-donor states with strong IR absorption. 23,24,[26][27][28][29]35 In this specific case, the gaseous S-containing products of CS 2 decomposition mainly in the hot ablative plume and minorly on the laser-heated Si surface (i.e., in the relief trenches), which are present in the amorphous "fingers", appear as chemical markers, indicating the formation of Si amorphous "fingers" through vapor-phase redeposition rather than via potential resolidification of the multishot laser-molten Si. In the same line, the high S abudance in the "fingers", being also highly homogeneous on the nanoscale, potentially indicates the high degree of intermixing and codeposition of Si ablation and CS 2 decomposition products, which can be perfectly realized in the first expansion/collapse cycle of the interfacial vapor bubble.…”
Section: Acs Applied Nano Materialsmentioning
confidence: 99%
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“…This implies that elemental S is dissolved in the amorphous Si "fingers" rather than sedimented on their nanocrystalline boundaries, which is in the former case favorable for the formation of S-donor states with strong IR absorption. 23,24,[26][27][28][29]35 In this specific case, the gaseous S-containing products of CS 2 decomposition mainly in the hot ablative plume and minorly on the laser-heated Si surface (i.e., in the relief trenches), which are present in the amorphous "fingers", appear as chemical markers, indicating the formation of Si amorphous "fingers" through vapor-phase redeposition rather than via potential resolidification of the multishot laser-molten Si. In the same line, the high S abudance in the "fingers", being also highly homogeneous on the nanoscale, potentially indicates the high degree of intermixing and codeposition of Si ablation and CS 2 decomposition products, which can be perfectly realized in the first expansion/collapse cycle of the interfacial vapor bubble.…”
Section: Acs Applied Nano Materialsmentioning
confidence: 99%
“…12,16−18 In contrast, ultrafine, down to sub-60 nm wide, surface nanoripples were revealed during ultrashort-pulse laser nanopatterning as weak relief nanomodulations in subablative "dry" 19,20 and strong relief nanomodulations in "wet" ablative 21,22 regimes, indicating a potential "wet processing" manner for 2D nanopatterning of Si. Moreover, ultrashort-pulse laser nanopatterning of Si in chemically active fluids, e.g., carbon disulfide (CS 2 ), was demonstrated to result in its surface hyperdoping by a few atomic percents of sulfur (>1 × 10 21 S atoms/cm 3 ), 23 compared to a few tenths of percent of impurity atoms (≥10 20 S atoms/cm 3 ) introduced in S-containing gases 24 (in any case, well above the equilibrium S solubility level in Si, ∼10 15 S atoms/cm 325 ). This makes Si surfaces unprecedentedly "black" via spectrally broad (UV−mid-IR) absorption within their microstructured and hyperdoped surface layers and very promising for advanced complementary-metal−oxide−semiconductor-compatible IR-photonics applications.…”
Section: Introductionmentioning
confidence: 99%
“…Such extinction coefficient demonstrates over the spectral range a typical smooth spectral dependence, related to Si–NP scattering, free‐carrier absorption (≈10 3 cm −1 , concentration ≈10 19 cm −3 ) and broadband absorption (≈10 4 cm −1 ) between different, inhomogeneously broadened S‐donor states in the amorphous Si phase and its “conduction” band [ 1,10–14 ] (Figure 5b). Meanwhile, additionally various narrow and strong (value ≈(0.5–3) × 10 4 cm −1 ) absorption bands appear in mid‐IR range (Figure 5b), representing the different characteristic “S‐donor band−conduction band” transitions in S‐doped crystalline Si, [ 15–17,36 ] occurring in this study not across a hyperdoped surface layer of a bulk Si target, [ 15,16 ] but, for the first time, over the nanocrystalline grains of the Si NPs at the donor impurity concentration ≈10 20 cm −3 . The derived free‐carrier concentration ≈10 19 cm −3 in the hyperdoped Si NPs exceeds by two orders of magnitude the maximal free‐carrier concentration ≈10 17 cm −3 (conductivity ≈0.1 Om −1 cm −1 ) in Si NPs laser‐fabricated in water ambient, [ 4 ] breaking through a way to much lower, much more safe IR‐laser and RF treatment powers during hyperthermia therapy of tumors.…”
Section: Figurementioning
confidence: 94%
“…In contrast, n‐hyperdoped Si was actively studied for the last decade as a material platform, supporting fabrication of mid‐IR sensitizers for solar cells, [ 9 ] broadband active media for thin‐film photovoltaics, [ 1 ] broad‐band mid‐IR night‐vision and imaging devices for novel promising and emerging applications. The currently achieved strong (≈10 3 –10 4 cm −1 ) smooth [ 10–14 ] or band‐engineered [ 15,16 ] mid‐IR absorption in sulfur‐(or selenium and tellurium [ 12 ] ) doped Si was suggested for raising solar‐cell efficiency up to 49% through efficient harvesting of near‐and mid‐IR solar radiation. [ 17 ] Besides the donor‐based band‐to‐band absorption, considerable free‐carrier absorption via thermal ionization of shallow donor states was also reported in such hyperdoped Si surface layers.…”
Section: Figurementioning
confidence: 99%
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