Structural and electrical properties of thin Ho2O3 gate dielectrics

Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor

“…In addition, the formation of sub‐stoichiometric Ho 2 O 3 also reinforced the charge trapping sites in the dielectric/IL interface. Comparing with previous literature the lowest average interface trap density, D it ~9.39 × 10 13 eV −1 cm −2 (at mid E C − E = 0.2 eV) in this work for 10 minutes sample value is higher than the reported 31 post annealed Ho 2 O 3 /Si interface D it ~3.00 × 10 11 eV −1 cm −2 . However, a lower Q eff ~8.80 × 10 12 cm −2 , Q it ~2.93 × 10 12 cm −2 , D it ~10 13 eV −1 cm −2 (at mid E C − E = 0.2 eV) and D total ~1.97 × 10 13 cm −2 has been acquired in our work in counter to thermally oxidized Sm 2 O 3 /Si interface 69 [ Q eff ~2.81 × 10 13 cm −2 , Q it ~5.56 × 10 12 cm −2 , D it ~10 14 eV −1 cm −2 (at mid E C ‐ E = 0.2 eV) and D total ~7.30 × 10 13 cm −2 ].…”

“…Figure6depicts the deconvoluted peaks of Ho 4d narrow scan for various oxidation/nitridation durations 5, 10, 15, and 20 minutes. The reference peak position of Ho 2 O 3 in the Ho 4d spectra was reported at 161.8 eV 31,46. It is clearly visible that the centroid peak of Ho 4d shifts negatively towards the lower binding energy by 1.07, 0.66, 0.87, and1.17 eV, respectively for 5, 10, 15, and 20 minutes with respect to the reference position of Ho 2 O 3 .…”

“…Based on these properties Ho 2 O 3 has been integrated as dielectric insulator material in sensor application for electrolyte‐insulator‐semiconductor device yielding higher sensitivity and pH sensing efficiency 32 . In addition, Ho 2 O 3 possesses the highest electronegativity and the highest lattice energy among all other REOs, indicating the least hygroscopic nature of Ho 2 O 3 which would be favourable for implementing Ho 2 O 3 /Ge gate stack within the expected MOS scaling limit 30,31 . Pan et al 31 demonstrated that Ho 2 O 3 shows well behaved encouraging electrical and thermal properties as a dielectric material for MOS devices when deposited on Si substrate followed by thermal annealing process.…”

“…32 In addition, Ho 2 O 3 possesses the highest electronegativity and the highest lattice energy among all other REOs, indicating the least hygroscopic nature of Ho 2 O 3 which would be favourable for implementing Ho 2 O 3 /Ge gate stack within the expected MOS scaling limit. 30,31 Pan et al 31 demonstrated that Ho 2 O 3 shows well behaved encouraging electrical and thermal properties as a dielectric material for MOS devices when deposited on Si substrate followed by thermal annealing process. Despite such attractive properties, there is no pertinent investigation of Ho 2 O 3 as a dielectric material for Ge-based MOS devices.…”

Structural properties and electrical characteristics of Ho2O3 and HoTixOy gate dielectrics for a-InGaZnO thin-film transistors

“…17,18 Holmium oxide (Ho 2 O 3 ) lm has been studied for gate dielectric applications due to its high k value, wide bandgap energy, high breakdown eld, and low leakage current. [19][20][21][22] Exposure to air, however, causes hygroscopic lanthanide oxides to react with moisture to form hydroxides, 23 causing lower values of k. The incorporation of Ti or TiO 2 lms into RE oxides increases their stability toward moisture. 24 van Dover 25 also demonstrated that the Ti adding RE oxide exhibited excellent electrical performance.…”