Structural and electrical properties of poly-SiGe thin films prepared by reactive thermal CVD

Influences of GeF4 on poly-SiGe films prepared by reactive thermal CVD

“…The deposition reactor has been described in detail elsewhere [5][6][7]. The substrate temperature and total pressure were kept at 450°C and 5 Torr, respectively.…”

“…We have investigated a new type of thermal chemical vapor deposition technique for low-temperature growth of polycrystalline thin films, which we call reactive thermal CVD, and succeeded in the direct poly-SiGe thin film deposition on the glass substrate by using Si 2 H 6 and GeF 4 as reactive source gasses [5,6]. With this technique, high Si content (95 at.%) poly-SiGe films have been prepared and high performance poly-SiGe TFTs have been fabricated [7][8][9].…”

High mobility top-gate thin film transistors fabricated with poly-Si1−xGex thin films on glass substrate

“…The poly-Si x Ge 1Àx films were prepared with a typical cold-wall type of low-pressure CVD reactor [10][11][12]. The substrate temperature and total pressure were kept at 450°C and 5 Torr, respectively.…”

“…We have investigated a new type of a thermal chemical vapor deposition technique featuring a set of reactive source gasses for low-temperature deposition of poly-Si thin films, called reactive thermal CVD and succeeded in the direct nucleation on the substrate and their successive growth to the grains by using Si 2 H 6 and GeF 4 as reactive source gasses [9][10][11][12][13]. Thus, bottomgate TFTs fabricated on SiO 2 substrates with these films achieved good device performances, i.e., a field effect mobility of 36 and 54 cm 2 /Vs for n-and p-channel TFTs, respectively [14,15].…”

EXAFS study on poly-Si1−XGeX films prepared by reactive thermal CVD method

“…In order to solve this problem, a reactive thermal CVD technique has been investigated where a Si 2 H 6 and GeF 4 gas mixture is used to deposit poly-Si 1ÀX Ge X films. The deposited films show good crystallinity without the amorphous tissue incubation layer [5,6]. In this deposition technique, the crystal nucleation process on the substrates and sequential crystal growth are key points for high quality poly-Si 1ÀX Ge X fabrication.…”