Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows

Liu, J.P.; Zhang, B.S.; Wu, Mingzai; Li, D.B.; Zhang, Juchen; Jin, R.Q.; Zhu, Jin; Chen, J.; Wang, J.F.; Wang, Y.T.; Yang, Hui

doi:10.1016/j.jcrysgro.2003.09.007

Cited by 33 publications

(15 citation statements)

References 11 publications

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“…In addition, the 3D character of the morphology implies a limited Al adatom diffusion in N-rich conditions [15,16]. On the other hand, Liu et al [17] reported that strain energy and the reduction of surface mobility are major attributors in the pit formation. Within this framework, the pitted morphology of sample A is probably from the excess N species, strain, and the low surface mobility due to relatively high ammonia flow rate.…”

Section: Resultsmentioning

confidence: 99%

The influence of thickness and ammonia flow rate on the properties of AlN layers

Çörekçí

Öztürk

Çakmak

et al. 2012

Materials Science in Semiconductor Processing

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a b s t r a c tUndoped AlN layers have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition in order to study the effects of ammonia (NH 3 ) flow rate and layer thickness on the structural quality and surface morphology of AlN layers by highresolution X-ray diffraction, scanning electron microscopy, and atomic force microscopy. Lower NH 3 flow rate improves crystallinity of the symmetric (0 0 0 2) plane in AlN layers. Ammonia flow rate is also correlated with surface quality; pit-free and smooth AlN surfaces have been obtained at a flow rate of 70 standard cm 3 per minute.Thicker AlN films improve the crystallinity of the asymmetric (1 0 1 2) plane.

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Section: Resultsmentioning

confidence: 99%

The influence of thickness and ammonia flow rate on the properties of AlN layers

Çörekçí

Öztürk

Çakmak

et al. 2012

Materials Science in Semiconductor Processing

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“…Quaternary AlInGaN films are considered to have the potential to overcome the above shortcomings of ternary alloys, since AlInGaN films can be grown by independently controlling the lattice constant and the band gap by adjusting the composition [9]. Therefore, AlInGaN attracts much attention as a candidate material for high efficiency LEDs or LDs.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Trimethylaluminum Flow Rate on the Structure and Optical Properties of AlInGaN Quaternary Epilayers

et al. 2017

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Abstract:In this work, a series of quaternary Al x In y Ga 1−x−y N thin films have been successfully achieved using metal organic chemical vapor deposition (MOCVD) method with adjustable trimethylaluminum (TMA) flows. Surface morphology and optical properties of Al x In y Ga 1−x−y N films have been evaluated. The indium segregation effect on the enhancement of UV luminescence emission in Al x In y Ga 1-x-y N films with increasing TMA flows was investigated. Our results shed some lights on future optical materials design and LED/LD applications.

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“…The techniques presently used for synthesis of mixed metal chalcogenide and oxide thin films are CBD, MOCVD, spin coating, electro deposition, spray pyrolysis, sputtering, crystal growth, and chemical bath deposition [6][7][8][9][10][11][12]. All these deposition techniques require specific sophisticated instrumentation.…”

Section: Introductionmentioning

confidence: 99%

Arrested Precipitation Technique for Synthesis of Chalcogenide and Oxide Thin Films

Bhosale¹

2015

J Adv Chem Eng

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Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows

Cited by 33 publications

References 11 publications

The influence of thickness and ammonia flow rate on the properties of AlN layers

The influence of thickness and ammonia flow rate on the properties of AlN layers

The Effect of Trimethylaluminum Flow Rate on the Structure and Optical Properties of AlInGaN Quaternary Epilayers

Arrested Precipitation Technique for Synthesis of Chalcogenide and Oxide Thin Films

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