The Effect of Trimethylaluminum Flow Rate on the Structure and Optical Properties of AlInGaN Quaternary Epilayers

Abstract

Abstract:In this work, a series of quaternary Al x In y Ga 1−x−y N thin films have been successfully achieved using metal organic chemical vapor deposition (MOCVD) method with adjustable trimethylaluminum (TMA) flows. Surface morphology and optical properties of Al x In y Ga 1−x−y N films have been evaluated. The indium segregation effect on the enhancement of UV luminescence emission in Al x In y Ga 1-x-y N films with increasing TMA flows was investigated. Our results shed some lights on future optical materials design and LED/LD applications.