Structural and optical properties of Nb-doped β-Ga2O3 thin films deposited by RF magnetron sputtering

Zhang, Hao; Deng, Jian; Pan, Zhiwei; Bai, Zhiying; Kong, Le; Wang, Jiyou

doi:10.1016/j.vacuum.2017.09.033

Cited by 64 publications

(17 citation statements)

References 18 publications

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“…The Nd 3d5/2 peak is located at 207.3 eV, which is consistent with reported data with the corresponding energy separation between Nd 3d5/2 and Nd 3d3/2 being 2.7-3.0 eV. [31] XPS spectra with the double peaks at binding energy of Nb 3d3/2 and Nb 3d5/2 for 209.6-209.9 eV and 206.9-207.5 eV, respectively, are assigned to the Nb 5+ chemical state. [32] The binding energies of 209.9 and 207.2 eV correspond to the Nb 3d3/2 and Nb 3d5/2 peaks shown in Figure 3a, respectively, which indicates that the Nb 5+ ions are introduced into metallic sublattices of the SnO 2 phase.…”

Section: Characterization Of the Nb-doped Sno 2 Filmssupporting

confidence: 92%

Significant performance enhancement of all‐inorganic CsPbBr₃ perovskite solar cells enabled by Nb‐doped SnO₂ as effective electron transport layer

Ru-xin

Zhao

Zhang

et al. 2021

Energy & Environ Materials

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All‐inorganic CsPbBr3‐based perovskite solar cells (PSCs) have attracted great attention because of their high chemical and thermal stabilities in ambient air. However, the short‐circuit current density (Jsc) of CsPbBr3‐based PSCs is inadequate under solar illumination because of the wide bandgap, inefficient charge extraction and recombination loss, leading to lower power‐conversion efficiencies (PCEs). It is envisaged that in addition to narrowing the bandgap by alloying, Jsc of the PSCs could be enhanced by effective improvement of electron transportation, suppression of charge recombination at the interface between the perovskite and electron transporting layer (ETL), and tuning of the space charge field in the device. In this work, Nb‐doped SnO2 films as ETLs in the CsPbBr3‐based PSCs have been deposited at room temperature by high target utilization sputtering (HiTUS). Through optimizing the Nb doping level alone, the Jsc was increased by nearly 19%, from 7.51 to 8.92 mA·cm−2 and the PCE was enhanced by 27% from 6.73% to 8.54%. The overall benefit by replacing the spin‐coated SnO2 with sputtered SnO2 with Nb doping was up to 39% increase in Jsc and 62% increase in PCE. Moreover, the PCE of the optimized device showed negligible degradation over exposure to ambient environment (T ˜ 25 °C, RH˜45%), with 95.4% of the original PCE being maintained after storing the device for 1200 h.

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Section: Characterization Of the Nb-doped Sno 2 Filmssupporting

confidence: 92%

Significant performance enhancement of all‐inorganic CsPbBr₃ perovskite solar cells enabled by Nb‐doped SnO₂ as effective electron transport layer

Ru-xin

Zhao

Zhang

et al. 2021

Energy & Environ Materials

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“…The roughness of such films was 0.0783 microns. It should be noted that an increase in grain size was observed for thin films of Ga2O3 films obtained by RF magnetron sputtering and upon doping with Nb and W [8,9]. From our results, it follows that modifying of films with silicon promoted the formation of larger grains of Ga2O3.…”

Section: Resultssupporting

confidence: 68%

Oxygen Sensors Based on Thin Films of Gallium Oxide Modified with Silicon

Аlmaev

Chernikov

Kushnarev

et al. 2019

The 6th International Electronic Conference on Sensors and Applications

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The results of an investigation of the electrical resistivity of Ga2O3 thin films modified with silicon under the influence of oxygen in the range of O2 from 9 to 100 vol. % and changes in the heating temperature of structures from 25 to 700 °C were presented. Thin films of Ga2O3 were obtained by RF magnetron sputtering of Ga2O3 targeted with pieces of Si on the target’s surface in oxygen–argon plasma. The possibility of developing selective oxygen sensors based on thin films Ga2O3 modified with silicon with a temperature of maximum response 400 °C was shown. Oxygen influence leads to a reversible increase in the samples’ resistance, due to the chemisorption of oxygen on the surface of thin Ga2O3 films. An increase in the response of sensors based on the thin polycrystalline films of gallium oxide modified with silicon is caused an increase in the adsorption centers for O−, due to an increase in the surface inhomogeneity and the appearance of additional adsorption centers Si4+.

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“…So it is necessary to explore the properties of β ‐Ga 2 O 3 :Nb thin film in detail. We have investigated the influence of Nb doping concentration and annealing atmosphere on the properties of β ‐Ga 2 O 3 :Nb thin film in our previous work [16, 17]. The film thickness is also an important factor that affects the properties of various kinds of thin films [18, 19].…”

Section: Introductionmentioning

confidence: 99%

Effect of thickness on the structural and optical properties of the niobium‐doped β ‐Ga ₂ O ₃ films

Zhang

Deng

Kong

et al. 2019

Micro & Nano Letters

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To investigate the effect of thickness on the structural and optical properties of niobium-doped beta gallium oxide (β-Ga 2 O 3 :Nb) thin films, a series of β-Ga 2 O 3 :Nb thin films with different thicknesses were prepared by radio-frequency magnetron method. The crystalline quality is highly improved when the film thickness exceeds 145 nm. The surface exhibits different morphologies under different film thicknesses. The average transmittance of all the films are over 80% in visible range, and that the ultraviolet absorption edge shifts to longer wavelength indicates the bandgap shrinks with increasing the film thickness. Moreover, the photoluminescence spectrum measurements indicate that fewer defects were formed when the film thickness is around 145 nm.

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Structural and optical properties of Nb-doped β-Ga2O3 thin films deposited by RF magnetron sputtering

Cited by 64 publications

References 18 publications

Significant performance enhancement of all‐inorganic CsPbBr₃ perovskite solar cells enabled by Nb‐doped SnO₂ as effective electron transport layer

Significant performance enhancement of all‐inorganic CsPbBr₃ perovskite solar cells enabled by Nb‐doped SnO₂ as effective electron transport layer

Oxygen Sensors Based on Thin Films of Gallium Oxide Modified with Silicon

Effect of thickness on the structural and optical properties of the niobium‐doped β ‐Ga ₂ O ₃ films

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Structural and optical properties of Nb-doped β-Ga2O3 thin films deposited by RF magnetron sputtering

Cited by 64 publications

References 18 publications

Significant performance enhancement of all‐inorganic CsPbBr3 perovskite solar cells enabled by Nb‐doped SnO2 as effective electron transport layer

Significant performance enhancement of all‐inorganic CsPbBr3 perovskite solar cells enabled by Nb‐doped SnO2 as effective electron transport layer

Oxygen Sensors Based on Thin Films of Gallium Oxide Modified with Silicon

Effect of thickness on the structural and optical properties of the niobium‐doped β ‐Ga 2 O 3 films

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Product

Resources

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Significant performance enhancement of all‐inorganic CsPbBr₃ perovskite solar cells enabled by Nb‐doped SnO₂ as effective electron transport layer

Significant performance enhancement of all‐inorganic CsPbBr₃ perovskite solar cells enabled by Nb‐doped SnO₂ as effective electron transport layer

Effect of thickness on the structural and optical properties of the niobium‐doped β ‐Ga ₂ O ₃ films