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The Nb-doped β-Ga 2 O 3 (β-Ga 2 O 3 :Nb) thin films have been deposited on the Si and quartz substrates by radio-frequency magnetron technique in argon ambient. The effects of annealing atmosphere on the structural and optical properties of β-Ga 2 O 3 :Nb thin films have been investigated. The crystallinity of β-Ga 2 O 3 :Nb film is improved obviously after annealing. An increase in surface roughness is observed on annealed films. The bandgap from 5.19 to 5.26 eV is obtained after annealing in different atmosphere, which is larger than the 5.09 eV before annealing. Moreover, the red-shift of photoluminescence emission peak is observed after annealing, and the annealing atmosphere has an influence on the peak intensity.

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To investigate the effect of thickness on the structural and optical properties of niobium-doped beta gallium oxide (β-Ga 2 O 3 :Nb) thin films, a series of β-Ga 2 O 3 :Nb thin films with different thicknesses were prepared by radio-frequency magnetron method. The crystalline quality is highly improved when the film thickness exceeds 145 nm. The surface exhibits different morphologies under different film thicknesses. The average transmittance of all the films are over 80% in visible range, and that the ultraviolet absorption edge shifts to longer wavelength indicates the bandgap shrinks with increasing the film thickness. Moreover, the photoluminescence spectrum measurements indicate that fewer defects were formed when the film thickness is around 145 nm.

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