Structural characterization of low-defect-density silicon on sapphire

Carey, K. W.; Ponce, Fernando; Amano, Jun; Aranovich, J.

doi:10.1063/1.332635

Cited by 12 publications

(3 citation statements)

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“…SOS films were found to be highly defective by numerous transmission electron microscopy (TEM) studies, with the most of defects concentrated near the interface between silicon film and the substrate [11], [12], [13], [14], [15]. The stress in SOS films was characterized by Raman spectroscopy [16], giving the values of 7.0±0.3 kbar at room temperature and 8.7±0.3 kbar at 77 K for films with thickness of 0.6Ͳ0.9 ʅm.…”

Section: Introductionmentioning

confidence: 99%

Large thickness-dependent improvement of crystallographic texture of CVD silicon films on R-sapphire

Moyzykh

Samoilenkov

Amelichev³

et al. 2013

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Large thickness-dependent improvement of crystallographic texture of CVD silicon films on R-sapphire

Moyzykh

Samoilenkov

Amelichev³

et al. 2013

Journal of Crystal Growth

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“…They propagate along the four equivalent {111} planes. However, they often annihilate in mid-layer, i.e., terminating in {211} type boundaries for microtwins (7,8) and coalescence of two stacking faults on different planes (7). Bulk defects.…”

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confidence: 99%

A Review of Materials Issues and Degradation of III-V Compound Semiconductors and Optical Devices

Ueda¹

2010

ECS Trans.

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Materials issues in III-V alloy semiconductors and our current understanding of degradation mechanism in III-V compound semiconductors and optical devices are systematically reviewed. Generation of defects and thermal instability are among these issues for these systems. In each phenomenon, generation mechanism of defects and structure are clarified. Three major degradation modes of optical devices, rapid degradation, gradual degradation, and catastrophic failure are briefly summarized, and the rapid and the gradual degradation modes are discussed in more detail. Materials Issues in III-V Alloy SemiconductorsMaterials issues in the growth of III-V alloy semiconductor thin films are focused on (1). These include the generation of various kinds of defects during growth, the generation of modulated structures due to spinodal decomposition and atomic ordering associated with growth kinetics on the surface. Defect generationDefect generation is one of the important materials issues in III-V alloy semiconductor thin film growth. Defects introduced during growth are classified into two types: interface defects and bulk defects.Interface defects. Defects belonging to this type are stacking faults, V-shaped dislocations, dislocation clusters, microtwins, inclusions, and misfit dislocations. Interface defects due to contamination, thermal damage of the substrate, local segregation at the interface, and those due to lattice-mismatch are schematically shown in Figs. 1 and 2.The stacking faults shown in Fig. 1(a) are generated from the hetero-interface, extending along the four equivalent {111} planes, forming a stacking fault tetrahedron (2). In MBE-grown crystals, they often correspond to surface defects (usually observed as "oval defects" lying along the <110> direction).Pair pits are often observed on the chemically etched surface of thin films. In the TEM image of the area which includes pair pits, small dislocation segments are observed. From the shape of the dislocations, this dislocation pair is assumed to comprise a Vshaped dislocation (see Fig. 1(b)). Occasionally, preferential etching takes place at such V-shaped dislocations (3).

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“…It has been reported that the density of dislocations is not noticeably affected by the ion implantation and regrowth anneal (Carey et al 1983). The most important improvement to the films quality is in the reduction in the number of planar defects.…”

Section: Introductionmentioning

confidence: 99%

The evolution of low defect density structures in silicon-on-sapphire thin films during post-ion implantation heat treatments

McKenzie

Domyo²,

Ho³

et al.

Springer Proceedings in Physics

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(100) silicon thin films grown on (1ī02) sapphire substrates is the most significant of the silicon-on-insulator technologies and has been used for many years in the production of integrated circuits. This paper presents a TEM study of the evolution of crystalline defects during the heat treatments designed to improve the quality of the films. Planar defects were found to be isolated to the outer surface of the films, whilst dislocations were abundant throughout. Defect density was considerably reduced by annealing at higher temperatures.

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Structural characterization of low-defect-density silicon on sapphire

Cited by 12 publications

References 11 publications

Large thickness-dependent improvement of crystallographic texture of CVD silicon films on R-sapphire

Large thickness-dependent improvement of crystallographic texture of CVD silicon films on R-sapphire

A Review of Materials Issues and Degradation of III-V Compound Semiconductors and Optical Devices

The evolution of low defect density structures in silicon-on-sapphire thin films during post-ion implantation heat treatments

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