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This paper presents an analysis of the various properties of the fused interface between GaAs and InP. Interface dislocations are characterized by transmission electron microscopy. Bipolar electrical properties are studied by electron beam induced current measurements and by electrical measurements of fused diode and laser structures. Absorptive optical losses at the interface are estimated from measurements on fused Fabry–Perot resonators and optical scattering losses from interface roughness are estimated by atomic force microscopy. Finally a preliminary mechanical analysis of fracture patterns of fused mesas is presented. The results from our analysis are used to develop guidelines for the fabrication of fused optoelectronic devices.

The band gap of Al0.48In0.52As lattice matched to InP is determined with high precision at 1.5 and 300 K as 1.511 and 1.439 eV, respectively. This determination, which resolves a long lasting dispute on the most fundamental material parameter of this semiconductor, is based on a comparative study of temperature-dependent photoluminescence, wavelength-dispersive x-ray analysis, and triple-crystal x-ray diffractometry.

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