Structural characterization of nanometer SiC films grown on Si

Li, J. P.; Steckl, A. J.; Golecki, I.; Reidinger, F.; Wang, L.; Ning, X. J.; Pirouz, P.

doi:10.1063/1.109106

Cited by 82 publications

(36 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…20 This result is comparable to the values commonly reported in the previous literatures for stoichiometric SiC. [22][23][24] As can be seen from Fig. 3, the intensities of Si-C and Si-O peaks become more intense with the increasing of annealing temperature, indicating a large amount of Si-C and Si-O bonding volumes in the films.…”

supporting

confidence: 87%

Synthesis of SiO2/β-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition

Zhang

Bian

et al. 2013

Applied Physics Letters

View full text Add to dashboard Cite

Amorphous silicon nitride deposited by hot-wire chemical vapor deposition b-SiC thin films were synthesized directly on graphite by hot filament chemical vapor deposition at low temperature. SiH 4 diluted in hydrogen was employed as the silicon source, while graphite was functioned as both substrate and carbon source for the as-grown b-SiC films. X-ray diffraction and Fourier transform infrared analysis indicate that SiO 2 /b-SiC/graphite hybrid composite was formed after post annealing treatment, and its crystalline quality can be remarkably improved under optimized annealing conditions. The possible growth mechanism was proposed based on in situ etching of graphite by reactive hydrogen radicals at the atomic level. V C 2013 AIP Publishing LLC.

show abstract

supporting

confidence: 87%

Synthesis of SiO2/β-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition

Zhang

Bian

et al. 2013

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…This is because the silicon atom removal process from the substrates is strongest vertically, with a faster rate on the ͑100͒ planes, decreasing to a minimum once the ͑111͒ planes meet, where removal decreases and eventually stops. Therefore, if the ͑111͒ Si substrate shows inverted triangular pits with faces along the ͑111͒ planes, as reported previously by many researchers, [22][23][24][25] ͑110͒ Si is characterized by inverted long rods showing ͑111͒ faces on each side with a smoothed shape at the terminal points, which has been never reported in previous works. Though a 3C-SiC carbonized layer was grown on each substrate, there were evident differences between the samples.…”

Section: Resultsmentioning

confidence: 72%

Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates

Severino

D’Arrigo

Bongiorno

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

The growth of thin cubic silicon carbide (3C-SiC) buffer layers in an horizontal hot-wall chemical vapor deposition reactor, through the carbonization of differently oriented Si surfaces, is presented. A qualitative and quantitative study has been performed on statistical parameters related to voids due to the buffer layer growth on the different substrate orientations emphasizing shape, size, and density as a function of the substrate orientation. Variation in the void parameters can be attributed to the atomic packing density related to the substrate orientations, which were (100) Si, (111) Si, and (110) Si in this study. Scanning electron microscopy and transmission electron microscopy were performed to analyze the surface and the crystalline quality of the 3C-SiC films grown and, eventually, an empirical model for the carbonization of Si surfaces formulated. Large platens characterize the 3C-SiC films with shapes related to the orientations of the substrate. These platens derive from the two-dimensional growth of different SiC islands which enlarge during the process due to the continuous reaction between Si and C atoms. The interior part of platens was characterized by the presence of a pure crystalline material with the presence of small tilts affecting some grains in the 3C-SiC layer in order to relief the stress generated with the substrate.

show abstract

“…[1][2][3][4] The substrate temperature must be high enough to produce thermal activation of the hydrocarbon source. The most common way to grow this layer is by exposing a Si substrate kept at high temperature to hydrocarbon gases.…”

Section: Introductionmentioning

confidence: 99%

Plasma-assisted chemical vapor deposition growth of SiC on Si(100): Morphology and electronic structure

Bittencourt¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

We have investigated the structure and the electronic properties of thin SiC films grown on Si(100) by plasma-assisted chemical vapor deposition from CH4 diluted in H-2 It was found that the growth proceeds through the nucleation of cubic and relaxed crystalline SIC islands preferentially oriented in the (100) direction. The average-island size increases with carbonization time up to a maximum size consisting of similar to 300 nm lateral width and similar to 100 nm height. We were able to determine the valence band discontinuity although the SIC overlayers were clusterlike End did not cover uniformly the Si substrate. The found value is 0.77+/-0.08eV. (C) 1998 American Vacuum Society

show abstract

Structural characterization of nanometer SiC films grown on Si

Cited by 82 publications

References 7 publications

Synthesis of SiO2/β-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition

Synthesis of SiO2/β-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition

Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates

Plasma-assisted chemical vapor deposition growth of SiC on Si(100): Morphology and electronic structure

Contact Info

Product

Resources

About