Structural, electrical, and optical properties of reactively sputtered SnO2 thin films

Kim, Sarah Eunkyung; Oliver, Miguel

doi:10.1007/s12540-010-0614-6

Cited by 24 publications

(23 citation statements)

References 25 publications

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“…2–7). The increase in the carrier concentration at low oxygen partial pressures was also observed by other groups which was attributed to a reduction in the trapping states. The decrease in the carrier concentration at higher oxygen partial pressures can be ascribed to a decrease in the oxygen vacancies which has been discussed in the transparency analysis.…”

Section: Resultssupporting

confidence: 80%

“…Clearly, the optical band gap of the film increases with oxygen partial pressure which is in accordance with the blue shift of the absorption edge. Since the nonstoichiometry caused by oxygen vacancies is often treated as the main reason for the opaque of SnO 2 thin films , the enhancement in the transmittance and optical band gap of the films might be attributed to the compensation of oxygen vacancies by an increase in the oxygen partial pressure. Hall effect measurements indicate that all films reveal n‐type semiconductor characteristic and the room temperature carrier concentrations are listed in Table .…”

Section: Resultsmentioning

confidence: 99%

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Structures, optical properties, and electrical transport processes of SnO₂ films with oxygen deficiencies

Zhang

et al. 2013

Physica Status Solidi (b)

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The structures, optical and electrical transport properties of SnO2 films, fabricated by rf sputtering method at different oxygen partial pressures, were systematically investigated. It has been found that preferred growth orientation of SnO2 film is strongly related to the oxygen partial pressure during deposition, which provides an effective way to tune the surface texture of SnO2 film. All films reveal relatively high transparency in the visible range, and both the transmittance and optical band gap increase with increasing oxygen partial pressure. The temperature dependence of resisitivities was measured from 380 K down to liquid helium temperatures. At temperature above K, besides the nearest‐neighbor‐hopping process, thermal activation processes related to two donor levels ( and 100 meV below the conduction band minimum) of oxygen vacancies are responsible for the charge transport properties. Below K, Mott variable‐range hopping conduction process governs the charge transport properties at higher temperatures, while Efros–Shklovskii (ES) variable‐range‐hopping conduction process dominates the transport properties at lower temperatures. Distinct crossover from Mott type to ES type variable‐range‐hopping conduction process at several to a few tens kelvin are observed for all SnO2 films.

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Section: Resultssupporting

confidence: 80%

Section: Resultsmentioning

confidence: 99%

Structures, optical properties, and electrical transport processes of SnO₂ films with oxygen deficiencies

Zhang

et al. 2013

Physica Status Solidi (b)

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“…As a consequence, the carrier concentration increased and hence the mobility, resulting in a decrease in film resistivity. De and Ray have found amorphous phases of unknown stoichiometry with resistivity of about 33.3 Ω cm [13] and Eun-Kyung Kim and Oliver have reported the amorphous SnO 2 with resistivity of 5.6 * 10 (−3) Ω cm [2]. As we known, the resistivity of 232 Ω cm for SnO 2 film is higher than that of other similar reports.…”

Section: Resultsmentioning

confidence: 60%

“…SnO 2 thin film can be prepared by a variety of methods such as chemical vapor deposition (CVD), sputtering, sol-gel process, and spray pyrolysis. Compared with other deposition techniques, magnetron sputtering is the most attractive technique for industrial development due to its high deposition rate, competitive costs, good reproducibility, and possibility of using commercially available large-area sputtering systems [2].…”

Section: Introductionmentioning

confidence: 99%

Preparation and Properties of SnO₂Film Deposited by Magnetron Sputtering

Leng

Jiang

et al. 2012

International Journal of Photoenergy

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Tin oxide SnO 2 films were prepared by RF magnetron sputtering. The effects of oxygen partial pressure percentage on the SnO 2 property have been investigated to obtain relatively high-resistivity SnO 2 films which could be used as buffer layers to optimize the performance of CdTe/CdS solar cells. The oxygen partial pressure percentage varied in the range of 1%∼10%. The results show that the introduction of oxygen would suppress the deposition and growth of SnO 2 films. Electrical measurement suggests that the film resistivity decreases with the increase of oxygen pressure. The SnO 2 films with resistivity of 232 Ω cm were obtained in pure Ar atmosphere. All SnO 2 films fabricated with different oxygen partial pressure percentage have almost the same optical band gap.

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“…The electrical conductivity of n-type SnO 2 thin films can be achieved as high as 180 −1 cm −1 . 2 With the recent interest in optoelectronic devices and oxide thin film transistor (TFT) applications, a high purified p-type oxide semiconductor with a good electrical conductivity is needed, but it is very challenging due to the low hall mobility of tin oxide. There have been few reports on p-type oxide semiconductors, for example Cu oxide and Zn oxide.…”

mentioning

confidence: 99%

P- to n-Type Conductivity Inversion of Nitrogen-Incorporated SnO Deposited via Sputtering

Kim

et al. 2012

ECS Solid State Letters

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The p-type to n-type conductivity inversion of SnO thin films was demonstrated through nitrogen incorporation via reactive RF sputtering. The undoped SnO thin film showed a relatively low p-type conductivity of 0.05 −1 cm −1 and it was lowered slightly to 0.04 −1 cm −1 with nitrogen incorporation. Then the SnO thin films exhibited the n-type conductivity of 79.97 −1 cm −1 as the nitrogen incorporation was increased. The undoped SnO thin film consisted of a polycrystalline SnO phase with a preferred (101) orientation; however, with nitrogen incorporation, the preferred orientation was suppressed, and the SnO thin films became nanocrystalline.Undoped SnO 2 thin films have been studied widely due to their relatively large optical bandgap of 3.6 eV, higher exciton binding energy of 130 meV, and excellent transparency of >85%. 1 SnO 2 generally has n-type conductivity due to the existence of intrinsic defects, such as oxygen deficiencies and tin interstitials. The electrical conductivity of n-type SnO 2 thin films can be achieved as high as 180 −1 cm −1 . 2 With the recent interest in optoelectronic devices and oxide thin film transistor (TFT) applications, a high purified p-type oxide semiconductor with a good electrical conductivity is needed, but it is very challenging due to the low hall mobility of tin oxide. There have been few reports on p-type oxide semiconductors, for example Cu oxide and Zn oxide. [3][4][5][6] In the case of p-type tin oxide it can be achieved through doping in SnO 2 using elements with a lower valence cation, such as antimony, indium, manganese, aluminum, or zinc as the acceptor impurity. 7-11 Also, nitrogen has been suggested to be an outstanding p-type dopant in SnO 2 due to its suitable ion size and electronegativity, high solubility limit, and non-toxicity. 12 However, extensive studies on nitrogen incorporation have not yet been undertaken. Few studies have been performed on the chemical state of nitrogen in SnO 2 . 12-15 Nitrogen can be incorporated as a pure tin oxide with few nitrogen substitutions as a tin nitride or as other tin oxide species which can generate defect sites that assist in controlling the electrical conductivity.Another method of achieving p-type tin oxide is the fabrication of tin monoxide (SnO) which exhibits p-type conductivity and relatively high hole mobility. [16][17][18][19][20] et al. 17 have reported the relatively high Hall mobility of 2.4 cm 2 V −1 s −1 at room temperature and showed a possibility for p-channel oxide TFT applications. Liang, et al. 20 suggested that the p-type conductivity of SnO was originated from the tin vacancy, and it can be improved through appropriate doping. There have been a few studies on nitrogen-incorporated SnO 2 , but there has not been any study of nitrogen-incorporated SnO. This paper investigates the effect of nitrogen in the structure of SnO thin films.Nitrogen-incorporated SnO thin films on borosilicate substrates were prepared via reactive RF magnetron sputtering from a tin target (99.999%). The sputtering atmosphe...

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Structural, electrical, and optical properties of reactively sputtered SnO2 thin films

Cited by 24 publications

References 25 publications

Structures, optical properties, and electrical transport processes of SnO₂ films with oxygen deficiencies

Structures, optical properties, and electrical transport processes of SnO₂ films with oxygen deficiencies

Preparation and Properties of SnO₂Film Deposited by Magnetron Sputtering

P- to n-Type Conductivity Inversion of Nitrogen-Incorporated SnO Deposited via Sputtering

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Structural, electrical, and optical properties of reactively sputtered SnO2 thin films

Cited by 24 publications

References 25 publications

Structures, optical properties, and electrical transport processes of SnO2 films with oxygen deficiencies

Structures, optical properties, and electrical transport processes of SnO2 films with oxygen deficiencies

Preparation and Properties of SnO2Film Deposited by Magnetron Sputtering

P- to n-Type Conductivity Inversion of Nitrogen-Incorporated SnO Deposited via Sputtering

Contact Info

Product

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Structures, optical properties, and electrical transport processes of SnO₂ films with oxygen deficiencies

Structures, optical properties, and electrical transport processes of SnO₂ films with oxygen deficiencies

Preparation and Properties of SnO₂Film Deposited by Magnetron Sputtering