2012
DOI: 10.1016/j.matlet.2012.05.025
|View full text |Cite
|
Sign up to set email alerts
|

Structure and optical properties of BiFe1−xZnxO3 thin films fabricated by pulsed laser deposition

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

3
9
0

Year Published

2013
2013
2022
2022

Publication Types

Select...
10

Relationship

2
8

Authors

Journals

citations
Cited by 31 publications
(12 citation statements)
references
References 18 publications
3
9
0
Order By: Relevance
“…It is clearly observed from Fig. 1(b) that the diffraction peak (110) shifts toward higher angle with the addition of SFN at around 31.5° in XRD patterns, which con rms lattice distortion of the doped samples [29,30]. The reduction of the lattice spacing (d) is calculated by the Bragg diffraction equation [31]: 2dsinθ = nλ (θ: the diffraction peak angle, λ: the wavelength of the X-ray).…”
Section: Resultsmentioning
confidence: 96%
“…It is clearly observed from Fig. 1(b) that the diffraction peak (110) shifts toward higher angle with the addition of SFN at around 31.5° in XRD patterns, which con rms lattice distortion of the doped samples [29,30]. The reduction of the lattice spacing (d) is calculated by the Bragg diffraction equation [31]: 2dsinθ = nλ (θ: the diffraction peak angle, λ: the wavelength of the X-ray).…”
Section: Resultsmentioning
confidence: 96%
“…The optical band gap of the films can be calculated by Tauc formula [21]: ˛hv = A(hv − E g ) 1/2 , where ˛ is the absorption coefficient, h is Planck's constant, v is the frequency of the incident photon, A is a constant, and E g is the optical band gap. By extrapolating straight line of (˛hv) 2 versus photon energy [22,23], the optical band gap of the BEFO x films is obtained. The determined E g value of pure BFO is 2.717 ± 0.008 eV, which is in good agreement with that reported in Ref.…”
Section: Resultsmentioning
confidence: 99%
“…Various methods have been employed to reduce the leakage current, such as doping impurities on A-, B-or A-B-sites of BFO thin films [7][8][9]. In previous work, the leakage current and ferroelectricity of the BFO thin films has successfully improved by Sm-doping [10].…”
Section: Introductionmentioning
confidence: 99%