Structure and transport properties of titanium oxide (Ti2O, TiO1+, and Ti3O5) thin films

Fan, Yunjie; Zhang, Chao; Liu, Xiang; Lin, Yue; Gao, Guanyin; Ma, Chao; Yin, Yuewei; Li, Xiaoguang

doi:10.1016/j.jallcom.2019.01.381

Cited by 35 publications

(24 citation statements)

References 44 publications

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“…In our study, TiO x (TiO and TiO 0.89 , x ≤ 1) was detected by XRD (Figure B) and TEM (Figure ). Fan et al declared that the electrical resistivities of titanium oxide films increase with increasing oxygen content, and the Ti 2 O, TiO 1+ δ , and γ ‐Ti 3 O 5 films show metallic, superconducting, semiconducting properties, respectively. Thus, TiO x ( x ≤ 1) was more metallic than TiO 2 and Ti 2 O 3 phase with the decreasing of mole fraction of oxygen in the compounds, while all the Ti‐O compounds at the interface of SAC/deposited film had a combination bonding characteristic of metallic, ionic, and covalent.…”

Section: Resultsmentioning

confidence: 99%

Wetting behavior and brazing of titanium‐coated SiC ceramics using Sn0.3Ag0.7Cu filler

Song

Chen

et al. 2019

J Am Ceram Soc

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By coating active titanium, Sn0.3Ag0.7Cu (SAC) filler wetted SiC effectively, as the contact angle decreased significantly from ~145° to ~10°. Ti3SiC2 and TiOx (x ≤ 1) reaction layers were formed at the droplet/SiC interface, leading to the reduction of contact angle. Reliable brazing of SiC was achieved using titanium deposition at 900°C for 10 minutes, and the typical interfacial microstructure of Ti‐coated SiC/SAC was SiC/TiOx + Ti3SiC2/Sn(s,s). Comparing to direct brazing, Ti–Sn compounds in the brazing seam were effectively reduced and the mechanical property of joints was dramatically improved by titanium coating. The optimal average shear strength of SiC joints reached 25.3 MPa using titanium coating‐ assisted brazing, which was ∼62% higher than that of SiC brazed joints using SAC‐Ti filler directly.

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Section: Resultsmentioning

confidence: 99%

Wetting behavior and brazing of titanium‐coated SiC ceramics using Sn0.3Ag0.7Cu filler

Song

Chen

et al. 2019

J Am Ceram Soc

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“…We need experimental information about the properties and electronic structure of single-crystalline stoichiometric TiO. However, inconsistent results have been reported on the nature of TiO, showing different temperature-dependent resistivities (8)(9)(10)(14)(15)(16) and superconductivities with a wide-range of transition temperature T c from below 0.5 K up to ~7 K (14,15,(17)(18)(19)(20)(21)(22). The main problem in experiment is the strong tendency of Ti 2+ to form Ti 3+ or Ti 4+ , and so achieving high-quality single-crystal TiO is difficult.…”

Section: Introductionmentioning

confidence: 99%

“…The main problem in experiment is the strong tendency of Ti 2+ to form Ti 3+ or Ti 4+ , and so achieving high-quality single-crystal TiO is difficult. The recently reported TiO(111) films with superconducting T c ~ 7 K and their -Al 2 O 3 (0001) substrates (19)(20)(21)(22) have the well-known "polar catastrophe" problem (23) resulting in the formation of domain structures (22) and probable change of stoichiometry from TiO, which leaves the origin of observed superconductivity an open question. The nature of the TiO ground state and whether the reported superconductivity is intrinsic remains a long standing but rather important question in condensed matter physics.…”

Section: Introductionmentioning

confidence: 99%

“…In this work, benefited from the well-controlled oxygen pressure and the epitaxy stabilization provided by the lattice-matched nonpolar substrate surface and the epitaxial growth along a nonpolar direction, we have prepared stoichiometric and highly crystalline TiO(001) thin films using oxide molecular beam epitaxy (MBE) on MgO(001) substrates. Unlike the previous bulk powder samples (8)(9)(10)(14)(15)(16)(17)(18) and thin films grown along a polar direction (19)(20)(21)(22), our epitaxial thin films are single phase and single domain, allowing transport measurements to reveal the intrinsic properties of TiO.…”

Section: Introductionmentioning

confidence: 99%

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Single-crystalline epitaxial TiO film: A metal and superconductor, similar to Ti metal

Zou

Han

et al. 2021

Sci. Adv.

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Titanium monoxide (TiO), an important member of the rock salt 3d transition-metal monoxides, has not been studied in the stoichiometric single-crystal form. It has been challenging to prepare stoichiometric TiO due to the highly reactive Ti2+. We adapt a closely lattice-matched MgO(001) substrate and report the successful growth of single-crystalline TiO(001) film using molecular beam epitaxy. This enables a first-time study of stoichiometric TiO thin films, showing that TiO is metal but in proximity to Mott insulating state. We observe a transition to the superconducting phase below 0.5 K close to that of Ti metal. Density functional theory (DFT) and a DFT-based tight-binding model demonstrate the extreme importance of direct Ti–Ti bonding in TiO, suggesting that similar superconductivity exists in TiO and Ti metal. Our work introduces the new concept that TiO behaves more similar to its metal counterpart, distinguishing it from other 3d transition-metal monoxides.

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“…There is little data available on the electronic structure of various titanium oxides. It is known that Ti 2 O and TiO oxides are conductors, and TiO 2 is a semiconductor with a band gap of 3.2-3.5 eV, depending on the crystal structure (rutile and anatase) [3,5,29,30]. Furthermore, the band gap of Ti 2 O 3 oxide is very narrow (<0.1 eV) [4].…”

Section: Introductionmentioning

confidence: 99%

Oxidation of Thin Titanium Films: Determination of the Chemical Composition of the Oxide and the Oxygen Diffusion Factor

et al. 2020

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The morphologies and local electronic structures of titanium coatings deposited on the surfaces of highly oriented pyrolytic graphite were determined. Chemical compositions of the oxides formed on the coating surfaces were established. A theoretical model was developed describing the changes in the TiO x oxides (1.75 < x < 2) band gap depending on the duration and temperature of the titanium film annealing procedure in oxygen. The effective activation energy of oxygen diffusion in TiO x (1.75 < x < 2) was determined, and the pre-exponential factor of the diffusion coefficient was estimated.

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Structure and transport properties of titanium oxide (Ti2O, TiO1+, and Ti3O5) thin films

Cited by 35 publications

References 44 publications

Wetting behavior and brazing of titanium‐coated SiC ceramics using Sn0.3Ag0.7Cu filler

Wetting behavior and brazing of titanium‐coated SiC ceramics using Sn0.3Ag0.7Cu filler

Single-crystalline epitaxial TiO film: A metal and superconductor, similar to Ti metal

Oxidation of Thin Titanium Films: Determination of the Chemical Composition of the Oxide and the Oxygen Diffusion Factor

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