Structure reinvestigation of α-, β- and γ-In₂S₃

Abstract

We report on the high-resolution structure analysis of In2S3 powder with monochromatic synchrotron light in the temperature range between 300 and 1300 K. Three modifications could be identified with the two phase transitions taking place at 717 K and above 1049 K. Crystal structure parameters and their temperature dependence for all three phases were extracted from the diffraction data by Rietveld refinement.

Structural and Optoelectronic Properties of β‐In2S3 Thin Films to be Applied on Cadmium Reduced Solar Cells

“…β‐In 2 S 3 is known as defect spinel structure owing its own nature. This material is so called “defect semiconductor” because it has 1/3 of Indium vacancies (V In ) acceptor as reported by P. Pistor et al C. H. Ho reported β‐In 2 S 3 structure with sulfur vacancies (V S ), indium vacancies (V In ) as acceptor, indium interstitial (In i ) as donor, and oxygen in sulfur vacancy (O Vs ). These defects were related with red emission (1.82 eV) for transitions between donors (V S ) and acceptors (V In ), green emission (2.29 eV) for transitions between (In i ) donors to (O Vs ) as acceptor, and the third band due to complex compounds .…”

“…M. I. Hossain reported CIGS solar cells with In 2 S 3 as buffer layer deposited by thermal evaporation; in this work a β‐In 2 S 3 (400) phase has been revealed and optical band gap values were 2.1–3.05 eV as a result of thermal treatment at 100 and 200 °C respectively. In 2 S 3 thin films crystallizes in three different phases: cubic α‐In 2 S 3 , tetragonal β‐In 2 S 3 and trigonal γ‐In 2 S 3 structures . β‐In 2 S 3 is the one with the widest applications due to its defective spinel structure, photosensitivity and physical characteristics …”

Influence of Substrate Temperature during InxSy Sputtering on Cu(In,Ga)Se2/Buffer Interface Properties and Solar Cell Performance

“…[12]. Therefore, a coexistence of this cubic α-phase could not be totally excluded in our case and probably this phase could occur in case there are locally very high temperatures above 717 K [13]. Even the sputtering power (density) [14] and thickness of the In x S y layers [15] could influence the structural properties of the deposited In x S y films.…”

Important Phase Control of Indium Sulfide Nanomaterials by Choice of Indium(III) Xanthate Precursor and Thermolysis Temperature

“…α ‐In 2 S 3 sometimes is expressed as cubic β ‐In 2 S 3 , due to their structural relationship inferred by the ordering of the vacant indium tetrahedral sites, the phenomenon is explained by van Landuyt et alPistor et al further outlines the confusion perpetuated by the contradictory literature on the α‐β‐ γ polymorphism of In 2 S 3 , centred mostly on thermal stability of the phases which is known to follow either the α‐β‐ γ or β‐α‐ γ order with increase in temperature. According to the literature analysis of Pistor et al α‐In 2 S 3 can exist as a low temperature phase when it is sulfur‐deficient, thus resulting in the α‐β‐ γ order. When the phase is stoichiometric, it becomes a high temperature system and the β‐α‐ γ order is obeyed.…”