Studies on In-pWSe2 Schottky diode by current–voltage–temperature method

Mathai, Achamma John; Patel, K. C.; Srivastava, Ritu

doi:10.1016/j.tsf.2010.01.027

Cited by 10 publications

(3 citation statements)

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“…For the Schottky barrier height and energy band estimation, temperaturedependent current density-voltage (J-V) measurements and Richardson's equation have been utilized as shown in Supplementary Fig. 4 [35][36][37] . The work function of the bottom Pt electrode matches well with the valence band edge of p-WSe 2 , which provides an excellent Ohmic contact to p-WSe 2 .…”

Section: Resultsmentioning

confidence: 99%

Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance

Yang

Park

et al. 2020

Nat Commun

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Ultra-thin two-dimensional semiconducting crystals in their monolayer and few-layer forms show promising aspects in nanoelectronic applications. However, the ultra-thin nature of two-dimensional crystals inevitably results in high contact resistance from limited channel/ contact volume as well as device-to-device variability, which seriously limit reliable applications using two-dimensional semiconductors. Here, we incorporate rather thick twodimensional layered semiconducting crystals for reliable vertical diodes showing excellent Ohmic and Schottky contacts. Using the vertical transport of WSe 2 , we demonstrate devices which are functional at various frequency ranges from megahertz AM demodulation of audio signals, to gigahertz rectification for fifth-generation wireless electronics, to ultraviolet-visible photodetection. The WSe 2 exhibits an excellent Ohmic contact to bottom platinum electrode with record-low contact resistance (~50 Ω) and an exemplary Schottky junction to top transparent conducting oxide electrode. Our semitransparent vertical WSe 2 Schottky diodes could be a key component of future high frequency electronics in the era of fifth-generation wireless communication.

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Section: Resultsmentioning

confidence: 99%

Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance

Yang

Park

et al. 2020

Nat Commun

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“…Schottky barrier height (SBH) in metal/semiconductor (MS) is a fundamental parameter for the rectifying contacts [4][5][6][7][8][9][10]. The presence of another semiconductor thin film with nanometer thickness at the MS interface in the Schottky contacts introduces a new method in the control of fundamental device parameters [10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Electrical and optical characteristics of Au/PbS/n-6H–SiC structures prepared by electrodeposition of PbS thin film on n-type 6H–SiC substrate

Gülen

Alanyalıoğlu

Ejderha

et al. 2011

Journal of Alloys and Compounds

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“…, A * is the effective Richardson constant, which is 27.6 A/cm 2 /K 2 for ptype WSe 2 [23], T is the absolute temperature in K, k the Boltzmann's constant, N V is the effective density of states in the valance band and N A is the acceptor density of the semiconductor used. resistance and deviates from linearity in both the cases.…”

mentioning

confidence: 99%

Schottky diode characteristics: Aluminium with 500 and 1000 Å thicknesses on p type WSe₂ crystal

Mathai

Patel

2010

Cryst. Res. Technol.

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The conduction properties of Al-pWSe 2 Schottky barrier diodes prepared identically but with different metal thickness are reported here. The p type WSe 2 semiconducting crystals used in the present study was grown by direct vapour transport technique. The current-voltage characteristics of these diodes were analyzed from 140 K to 300 K on the basis of thermionic emission theory applying Gaussian distribution. Below 200 K, deviations were observed in barrier height, ideality factor and Richardson plot. Hence at lower temperatures, a model has been considered where the total current is assumed to be the sum of thermionic emission, generation recombination and tunneling components. The observed deviations in the diode parameters were successfully interpreted in terms of the contribution of these multiple charge transport mechanisms across the interface of the fabricated diodes. The diode with a thickness of 500 Å Al showed more homogeneous nature than with 1000 Å.

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Studies on In-pWSe2 Schottky diode by current–voltage–temperature method

Cited by 10 publications

References 50 publications

Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance

Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance

Electrical and optical characteristics of Au/PbS/n-6H–SiC structures prepared by electrodeposition of PbS thin film on n-type 6H–SiC substrate

Schottky diode characteristics: Aluminium with 500 and 1000 Å thicknesses on p type WSe₂ crystal

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Studies on In-pWSe2 Schottky diode by current–voltage–temperature method

Cited by 10 publications

References 50 publications

Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance

Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance

Electrical and optical characteristics of Au/PbS/n-6H–SiC structures prepared by electrodeposition of PbS thin film on n-type 6H–SiC substrate

Schottky diode characteristics: Aluminium with 500 and 1000 Å thicknesses on p type WSe2 crystal

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Schottky diode characteristics: Aluminium with 500 and 1000 Å thicknesses on p type WSe₂ crystal