Study and Simulation of the Heterojunction Thin Film Solar Cell a-Si(n)/a-Si(i)/c-Si(p)/a-Si(i)/a-Si(p)

Zarede, Toufik; Lidjici, Hamza; Fathi, Mohamed; Mahrane, Achour

doi:10.1007/s11664-016-4542-1

Cited by 4 publications

(1 citation statement)

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“…Further, numerous research on thin lm based silicon heterojunction solar cell is ongoing using metal oxides as n-type layer with crystalline silicon (p-cSi) wafer as p-type as well as metal oxides as p-type layer with n-type cSi (n-cSi) wafer due to their easy availability and environment friendly [5][6][7][8][9]. Aluminium doped zinc oxide (AZO) and zinc oxide can be used as window layers, antire ection coating (ARC) layer & as TCO layer in solar cells [10,11].…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation for Optimization of Ultra-thin n-type AZO and TiO2 Based Textured p-type c-Si Heterojunction Solar Cells

Yadav

Kumar

2021

Silicon

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A maximum e ciency of 17% for ultra-thin n-type AZO layer and 17.5% for ultra-thin n-type TiO 2 layer based silicon heterojunction solar cell is reported by optimizing its properties which is much higher than practically obtained e ciency signifying a lot of improvements can be performed to improve e ciency of TiO 2 /Si and AZO/Si heterojunction solar cell. AZO layer and TiO 2 layer is used as n-type emitter layer and crystalline silicon wafer is used as p-type (p-cSi) layer for modelling AZO/Si and TiO 2 /Si heterojunctions solar cell respectively using AFORS HET automat simulation software. Various parameters like thickness of AZO, TiO 2 layer, p-cSi layer, doping concentration of donors (Nd) and effective conduction band density (Nc) are optimized. Finally, texturing at different angle is studied and maximum e ciency is reported at 70 µm thick p-type crystalline Silicon (p-cSi) wafer, that can be very helpful for manufacturing low cost HJ solar cells at industrial scale because of thin wafer and removal of additional processing setup required for deposition of amorphous silicon i-layer. Utilization of TiO 2 and Aluminium doped Zinc Oxide as n-type layer and p-cSi as p-type layer can help in producing low cost and e cient heterojunction (HJ) than compared to HJ with intrinsic thin layer HIT solar cells.

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