Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement

Nagarajan, Venkatesan; Chen, Kun-Ming; Chen, Bo‐Yuan; Huang, Guo–Wei; Chuang, Chia-Wei; Lin, Chun-Hsiung; Anandan, Deepak; Wu, Chia‐Ju; Han, Ping-Cheng; Singh, Sankalp Kumar; Luong, Tien-Tung

doi:10.1109/tdmr.2020.2987394

Cited by 22 publications

(13 citation statements)

References 23 publications

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“…The SiN x passivation layer on the surface of the device is widely utilized to suppress the current collapse, and the interface states between the SiN x and AlGaN barrier layers have been broadly investigated [ 32 , 33 , 34 , 35 ]. The existence of donor-type traps between the interface has been demonstrated, and in the proposed BP-HEMT, donor-type traps are introduced correspondingly at the interface between the AlGaN buffer and Si 3 N 4 buried layer during fabrication.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

“…Figure 2 compares the experimental results from Oliver Hilt [ 31 ] and simulation results when the device is on state at V GS = 1, 3, 5 V and L GD = 6 μm. These models added in the simulations are adopted according to [ 32 , 33 ]. As shown in Figure 2 , the I DS -V DS simulation characteristics fit well with experimental results.…”

Section: Device Structure and Mechanismmentioning

confidence: 99%

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A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Guo

et al. 2022

Micromachines

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In this article, an AlGaN and Si3N4 compound buffer layer high electron mobility transistor (HEMT) is proposed and analyzed through TCAD simulations. In the proposed HEMT, the Si3N4 insulating layer is partially buried between the AlGaN buffer layer and AlN nucleating layer, which introduces a high electric field from the vertical field plate into the internal buffer region of the device. The compound buffer layer can significantly increase the breakdown performance without sacrificing any dynamic characteristics and increasing the difficulty in the fabrication process. The significant structural parameters are optimized and analyzed. The simulation results reveal that the proposed HEMT with a 6 μm gate-drain distance shows an OFF-state breakdown voltage (BV) of 881 V and a specific ON-state resistance (Ron,sp) of 3.27 mΩ·cm2. When compared with the conventional field plate HEMT and drain connected field plate HEMT, the breakdown voltage could be increased by 148% and 94%, respectively.

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Section: Simulation Results and Discussionmentioning

confidence: 99%

Section: Device Structure and Mechanismmentioning

confidence: 99%

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Guo

et al. 2022

Micromachines

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“…6 (e)]. Conventional Schottky-gate HEMTs have been reported that considerable current collapse (>80%) may occur at room temperature [39,40,43]. Compared with conventional Schottky-gate HEMT, MISHEMT with a 5nm in-situ SiNx dielectric layer could endure lager stressing condition and significantly improve current collapse.…”

Section: Device Results and Discussionmentioning

confidence: 99%

“…SiNx/AlGaN/GaN MISHEMT, including transfer characteristics, output properties, threshold voltage instability, and pulsed I-V characteristics were measured using semiconductor device analyzer. The principles and waveforms of stress-recovery-measurement, double pulse measurement, and drain current transient measurement with pre-stressing could be found elsewhere [38][39][40][41]. The positive shift of Vth was related to trap states in the gate dielectric and at the insulator/AlGaN interface.…”

Section: Both Electrical Static and Dynamic Properties Of In-situmentioning

confidence: 99%

Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiN_x Dielectric Layer

Zhang

et al. 2022

IEEE J. Electron Devices Soc.

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A comprehensive study on dynamic characteristics of GaN MISHEMT with a 5nm-thick in-situ SiNx dielectric is presented. Effects of both negative and positive gate bias on threshold voltage instability were investigated and miniature threshold voltage shift was acquired. The slight shift was considered to be associated with the traps at the insulator/AlGaN interface and in the dielectric layer itself. Pulsed I-V measurements with various gate quiescent biases presented small current collapse (11%) and low enhancement of dynamic Ron for zero quiescent drain bias. When drain quiescent bias was strengthened to 20V, an increased dynamic Ron/static Ron ratio was identified but still limited to a low value of 1.24. The conduction reduction was in a good agreement with measurement results from drain current transient spectroscopy and possibly originates from trap states existed in the access region. Additional current collapse was observed in hard switching-on operation, resulted from energetic hot electrons accelerated by drain-source electrical field during the off-to-on step. The measurement results showed stabilized threshold voltage, a low dynamic Ron/static Ron ratio, and suppressed current collapse via employing a 5-nm thin in-situ SiNx layer in GaN MISHEMT, enabling it a promising solution for high-efficiency power switching applications.

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“…An AlGaN back-barrier is commonly employed to block hot carriers from the channel into the buffer [20], but it also decrease 2DEG density because the back-barrier induces a sheet of negative charges at the GaN/AlGaN interface below the 2DEG channel. UV light was found to be able to suppress charge trapping in the buffer of GaN HMET [21], and changes in the trapping effect of devices exposed to UV light also influenced device output and noise characteristics [22][23][24]. Kang et al used a buffer layer consisting of multiple carbon-doped and undoped GaN layers to compensate the deep-acceptor states in the carbon-doped parts by electrons transferred from the undoped GaN regions [25,26], which helps to weaken buffer-induced CC under low drain voltage stress.…”

Section: Simulation Modelmentioning

confidence: 99%

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study

et al. 2021

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Carbon doping in the buffer of AlGaN/GaN high-electron-mobility transistors (HEMTs) leads to the notorious current collapse phenomenon. In this paper, an HEMT structure with a source-connected p-GaN (SCPG) embedded in the carbon-doped semi-insulating buffer is proposed to suppress the buffer-induced current collapse effect. Two-dimensional transient simulation was carried out to show the successful suppression of buffer-induced current collapse in the SCPG-HEMTs compared with conventional HEMTs. The mechanism of suppressing dynamic on-resistance degradation by ejecting holes from the SCPG into the high resistive buffer layer after off-state stress is illustrated based on energy band diagrams. This paper contributes an innovative device structure to potentially solve the buffer-induced degradation of the dynamic on-resistance in GaN power devices.

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Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement

Cited by 22 publications

References 23 publications

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiN_x Dielectric Layer

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study

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Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement

Cited by 22 publications

References 23 publications

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study

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Product

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Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiN_x Dielectric Layer