Study of nanometer-scale structures and electrostatic properties of InAs quantum dots decorating GaAs/AlAs core/shell nanowires

Abstract

The configurations of core/shell nanowires (NWs) and quantum dots (QDs) decorating NWs have found great applications in forming optoelectronic devices thanks to their superior performances. The combination of the two configurations would expect to bring more benefits, however, the nanometer-scale electrostatic properties of the QD/buffer layer/NW heterostructures are still unrevealed. In this study, the InAs QDs decorating GaAs/AlAs core/ shell NWs are systemically studied both experimentally and theoretically. The layered atomic structures, chemical information, and anisotropic strain conditions are characterized by comprehensive transmission electron microscopy (TEM) techniques. Quantitative electron holography analyses show a large number of electrons accumulating in the InAs QD, especially at the dot apex, and charges of reversed signs and similar densities are observed to distribute at the sequential interfaces, leaving great amounts of holes in the NW core. Theoretical calculations including simulated heterostructural band structures, interfacial charge transfer, and chemical bonding analysis are in good accordance with the experimental results, and prove the important role of the AlAs buffer layer in adjusting the heterostructural band structure as well as forming stable InAs QDs on the NW surfaces. These results could be significant for achieving related optoelectronic devices with better stability and higher efficiency.

Study of structure-property relationship of semiconductor nanomaterials by off-axis electron holography

“…4(e) and 4(f)). Density functional theory (DFT) calculations reveal that the introduction of GaAs QW would lead to quantum confinement effect in this heterostructure, and the resultant changes in band gap explains well the observed blue-shift of the GaAs QW peak as compared to that of single GaAs NW in the corresponding PL spectra [21] .…”

“…The charge density profile across the FeS 2 pieces indicates positive charges gathered on one side, and negative charges accumulated on the other side of the MoS 2 /FeS 2 inter- (c, d) PL spectra of InAs QDs/GaAs NW (red) and pure GaAs NW (black) for comparison [20] . Line profiles of (e) electrostatic potential and (f) charge density across the GaAs/AlGaAs QW/NW heterostructures [21] . face forming local polarized field, as presented in Figs.…”

“…(c, d) PL spectra of InAs QDs/GaAs NW (red) and pure GaAs NW (black) for comparison[20] . Line profiles of (e) electrostatic potential and (f) charge density across the GaAs/AlGaAs QW/NW heterostructures[21] .…”