Study of stability problems due to undesired coupling of a RF power amplifier using a distributed active transformer

Park, Jonghoon; Lee, Changhyun; Park, Changkun

doi:10.1016/j.mejo.2015.09.011

Cited by 3 publications

(2 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, for the case of linear CMOS power amplifiers, the location of the driver stage should be modified. Given that the gain of the linear CMOS power amplifier is generally higher than that of the nonlinear CMOS power amplifier, the driver stage should be located outside of the output transformer to mitigate the stability problems . If the driver stage is located within the output transformer, it is very difficult to obtain unconditionally stable characteristics in a linear CMOS power amplifier.…”

Section: Typical Structure Of Cmos Power Amplifier Using Output Transmentioning

confidence: 99%

2.4‐GHz CMOS linear power amplifier for IEEE 802.11N WLAN applications

Yoo

Lee

Kang

et al. 2017

Micro & Optical Tech Letters

Self Cite

View full text Add to dashboard Cite

In this work, we design a linear CMOS power amplifier with a spiral‐type output transformer for IEEE 802.11n WLAN applications. We conduct studies to identify the proper output transformer and power stage structures for linear CMOS power amplifiers. The power amplifier is composed of a single differential‐pair for the power stage to mitigate the stability problems that frequently arise in high gain linear power amplifiers. Additionally, we investigate the output matching network using a spiral‐type output transformer to minimize the output return loss. To verify the feasibility of the power amplifier, we designed a 2.4‐GHz power amplifier with a 180‐nm SOI CMOS process. The designed power amplifier is measured using an IEEE 802.11n WLAN signal. The power amplifier achieves 21.28 dBm output power while the measured EVM satisfies the standard for 802.11n applications. © 2017 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:546–550, 2017

show abstract

Section: Typical Structure Of Cmos Power Amplifier Using Output Transmentioning

confidence: 99%

2.4‐GHz CMOS linear power amplifier for IEEE 802.11N WLAN applications

Yoo

Lee

Kang

et al. 2017

Micro & Optical Tech Letters

Self Cite

View full text Add to dashboard Cite

show abstract

“…However, because most power amplifiers essential in RF systems are designed using the HBT process for mobile and sensor applications, these power amplifiers cannot be integrated with other RF ICs or with analog or digital ICs. More recently, many studies related to CMOS power amplifiers have been conducted with fully integrated RF systems in an effort to reduce the unit cost of production [6][7][8][9][10]. Although low breakdown voltages and nonlinear characteristics of CMOS devices have been regarded as obstacles in the designs of power amplifiers using the CMOS process, many useful techniques which can be used to overcome the problems associated with CMOS power amplifiers have been introduced and published [11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

A Cmos Power Amplifier Using an Asymmetrical Input Transformer to Enhance the Gain for Ieee 802.11N Wlan Applications

Sim¹,

Yoo²,

Lee³

et al. 2019

PIER M

Self Cite

View full text Add to dashboard Cite

In this study, we propose an asymmetrical input transformer for the input baluns in a differential RF CMOS power amplifier to minimize the loss induced by the input transformer. To reduce the loss caused by the magnetic coupling between the primary and secondary parts of a typical transformer, we modify the interconnection between the input transformer and the differential input of the driver stage. Unlike a typical transformer, the primary and secondary parts of the proposed transformer are directly connected to the input of the driver stage. As a result, the input signal in the primary part can reach one of the inputs of the differential driver stage, thereby reducing the loss caused by magnetic coupling. To verify the functionality of the proposed asymmetrical input transformer, we designed a 4.5-GHz differential CMOS power amplifier for IEEE 802.11n WLAN applications with 64-QAM, 9.6 dB PAPR, and a bandwidth of 20 MHz. The designed power amplifier is fabricated using the 180-nm SOI RF CMOS process. The measured maximum linear output power is 17.59 dBm with a gain of 29.23 dB.

show abstract

Realization with Fabrication of Double-Gate MOSFET Based Class-AB Amplifier

Pillay

Srivastava

2020

ijeetc

View full text Add to dashboard Cite

This research work designs the class-AB amplifier with the application of Double-Gate (DG) MOSFET, which provides insight on how the amplifier can be utilized, in accordance with its future design. Main consideration is the use of DG MOSFET in audio amplifier design, for its low power and low noise application, voltage regulation for high to low power, etc. The challenge of this design is an attempt to use the DG MOSFET as prominent component, to demonstrate it as a usable in common electronic applications. Model of class-AB amplifier using the DG MOSFET (for audio amplifier) has been designed, fabricated, and thereafter analysed with its frequency and power characteristics. This proposed design with 2 Wrms audio amplifier drives a nominal 8 Ω load by a 100 mVrms input signal, for the typical audio frequency range of 20 Hz – 20 kHz.

show abstract

Study of stability problems due to undesired coupling of a RF power amplifier using a distributed active transformer

Cited by 3 publications

References 16 publications

2.4‐GHz CMOS linear power amplifier for IEEE 802.11N WLAN applications

2.4‐GHz CMOS linear power amplifier for IEEE 802.11N WLAN applications

A Cmos Power Amplifier Using an Asymmetrical Input Transformer to Enhance the Gain for Ieee 802.11N Wlan Applications

Realization with Fabrication of Double-Gate MOSFET Based Class-AB Amplifier

Contact Info

Product

Resources

About