Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode

A study of current‐voltage and capacitance‐voltage characteristics of Au/n‐GaAs and Au/GaN/n‐GaAs Schottky diodes in wide temperature range

“…In recent years, GaAs and GaN have attracted significant attention, due to their physical and electrical properties, such as wide band gap, excellent transport, high saturation electron velocity, high thermal conductivity, high breakdown voltage, and chemical inertness . Hence, they have potential application in the fabrication of high‐temperature, high‐frequency, and optoelectronic devices . Among these applications, the Schottky contact as Au/n‐GaAs structures.…”

“…Among these applications, the Schottky contact as Au/n‐GaAs structures. Many studies are investigated to improve the interface properties of this structure by nitridation of the GaAs surface . The nitridation process is an important step to eliminate the crystallographic defects which leading to high interface states density.…”

“…It is well known that the interface states act as recombination‐generation centers that cause a reduction of the carrier lifetime, increase of the device noise, increase of the leakage currents, and cause the pinning of the Fermi level . However, it was found that this thin GaN interface layer (0.7 to 2.2 nm) affected the electrical behavior of the Au/n‐GaAs structure at room temperature, such as barrier height, ideality factor n , saturation current I s , series resistance R s , and potential diffusion V d . This work is an attempt to study the effect of the thin GaN interfacial layer on the electrical parameters of the Au/n‐GaAs structure, in wide temperature range 100 to 400 K , as well as on the homogeneities of barrier height and the transport phenomena, using Silvaco‐Atlas simulator.…”

Study of Temperature-dependent Conduction Mechanisms in Au/0.8nm-GaN/n-GaAs Schottky Diode

“…The surface cleaning, the Schottky contacts, and the ohmic contacts processes were carried out as described in refs. [28,38]. After surface cleaning, the substrates heated at 500 C° were nitrided using a glow discharge nitrogen plasma source, running at 5 W for 30 min in an ultra-high vacuum chamber.…”

“…In this context, surface passivation is the best method to control the defective states [27][28][29][33][34][35][36][37]. Many studies have been done to improve the interface properties by nitridation of GaAs surface [27,28,35,36,[38][39][40][41]. The nitride layers have good stability against the formation of amorphous surface oxides, high electronegativity, and thermal stability [27,42].…”