Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade

Algul, Berrin Pinar; Kodera, Tetsuo; Oda, Shunri; Uchida, Ken

doi:10.7567/jjap.50.04dn01

Cited by 4 publications

(4 citation statements)

References 17 publications

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“…It is reduced by the usage of thicker nanotubes since V Th and D CNT have the inverse relationship (2). In (2),

V_{π} false(≃ 3.0 33 eV false)

is the carbon π–π bond energy in the tight bonding model and e is the unit electron charge

V_{Th} = \frac{E_{g}}{2 e} = \frac{\sqrt{3}}{3} \times \frac{a V_{π}}{e D_{CNT}} ≃ \frac{0.43}{D_{CNT} (nm)}

The width of the transistor ( W Gate ) can be approximately calculated by (3) [28], where W Min is the minimum width, # Nanotube determines the number of CNTs under the gate, and pitch is the distance between the centres of two adjoining CNTs

W_{Gate} ≃ Max false(W_{Min}, normal# Nanotubes \times pitch false)

CNFETs have many potential advantages such as promising carrier transport property [19, 29]. The off‐state behaviour of the transistor depends on the subthreshold leakage current, which is mostly caused by band‐to‐band tunnelling (BTBT) current [30].…”

Section: Cnfet Technology: Potentials Achievements and Challengesmentioning

confidence: 99%

“…The off‐state behaviour of the transistor depends on the subthreshold leakage current, which is mostly caused by band‐to‐band tunnelling (BTBT) current [30]. Although BTBT current tends to be extremely small in most semiconductor devices, it potentially increases in CNTs because of their small effective mass [29]. It is affected by a large electrostatic capacitance between the channel and substrate.…”

Section: Cnfet Technology: Potentials Achievements and Challengesmentioning

confidence: 99%

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Voltage mirror circuit by carbon nanotube field effect transistors for mirroring dynamic random access memories in multiple‐valued logic and fuzzy logic

Jasemi¹,

Mirzaee

Navi

et al. 2015

IET Circuits, Devices & Systems

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In this paper, a new voltage mirror circuit by using carbon nanotubes (CNTs) technology is presented. This circuit is specifically proposed for the application of duplicating multiple-valued and fuzzy dynamic random access memories. The given structure prevents any voltage drop for the capacitor inside the memory cell. As a result, any fanout circuit can be driven. The new structure can be utilised for different multiple-valued logic systems without a change. The unique characteristics of carbon nanotube field effect transistor (CNFET) technology are exploited in this paper to meet the desired design goals. It demonstrates the potentials of CNFET technology in a realistic very largescale integration application. The proposed design is highly tolerant to D CNT variation and it is also immune to misaligned CNTs. Simulation results demonstrate that it provides sufficient driving capability with reasonable accuracy.

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“…It is reduced by the usage of thicker nanotubes since V Th and D CNT have the inverse relationship (2). In (2),

V_{π} false(≃ 3.0 33 eV false)

is the carbon π–π bond energy in the tight bonding model and e is the unit electron charge

V_{Th} = \frac{E_{g}}{2 e} = \frac{\sqrt{3}}{3} \times \frac{a V_{π}}{e D_{CNT}} ≃ \frac{0.43}{D_{CNT} (nm)}

W_{Gate} ≃ Max false(W_{Min}, normal# Nanotubes \times pitch false)

Section: Cnfet Technology: Potentials Achievements and Challengesmentioning

confidence: 99%

Section: Cnfet Technology: Potentials Achievements and Challengesmentioning

confidence: 99%

Voltage mirror circuit by carbon nanotube field effect transistors for mirroring dynamic random access memories in multiple‐valued logic and fuzzy logic

Jasemi¹,

Mirzaee

Navi

et al. 2015

IET Circuits, Devices & Systems

View full text Add to dashboard Cite

show abstract

“…1 In fact, the CNT-based tunneling FETs can be within reach by considering: (1) a conventional p-i-n channel doping profile, which can be realized chemically or electrostatically, [1][2][3] or (2) the adoption of the band-to-band tunneling (BTBT) operating regime 4 instead of the thermal regime using either junctionless paradigm 5 or n-i-n (p-i-p) doping profile. [6][7][8][9] The main merits of such devices are the sub-thermionic subthreshold swing and the high current-ratio, which are profitable in terms of low-power consumption that is a main concern in modern very large-scale integration. [1][2][3][10][11][12] However, such devices exhibit low on-currents due to the BTBT-based on-state mechanism, which is considered as an issue.…”

mentioning

confidence: 99%

Improved Switching Performance of Nanoscale p-i-n Carbon Nanotube Tunneling Field-Effect Transistors Using Metal-Ferroelectric-Metal Gating Approach

Tamersit

2021

ECS J. Solid State Sci. Technol.

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In this paper, the metal-ferroelectric-metal (MFM) gating design is used to boost the switching performance of the nanoscale p-i-n carbon nanotube (CNT) tunneling field-effect transistors (TFET). The modeling investigation is based on a rigorous computational approach that combines a self-consistent quantum simulation with the one dimensional Landau–Khalatnikov equation while considering ballistic transport conditions. The numerical results have revealed that the ferroelectric-induced amplified internal gate voltage is efficient in improving the switching performance of the p-i-n CNT tunneling FET. Particularly, the negative capacitance (NC) CNT tunneling FET has exhibited higher on-current, higher current ratio, steeper subthreshold swing, higher I60 factor, and faster intrinsic delay than those provided by the conventional design. In addition, the impact of the ferroelectric (FE) layer thickness on the switching figures of merit has also been assessed, where TFETs with thicker FE layers have exhibited more improved switching performance than those with thinner FE layers. The obtained results indicate that the MFM-based gating design can be an alternative improvement technique for ultrascaled p-i-n CNT tunneling FETs.

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“…Carbon nanotubes and graphene nanoribbons have a very small effective mass with direct energy-gap and very small thickness, which makes them very suitable for band to band tunneling devices. 6,7 In order to improve the electrical properties of tunnel transistors, various methods have been used, including electrically doping or charge plasma, lightly doping, Schottky-Ohmic structure, multimaterial gate, and heterogeneous structures. [8][9][10][11][12][13] In most of previous studies, the main objective has been to reduce am-bipolar and leakage current and the ON-current is not significantly changed.…”

mentioning

confidence: 99%

Theoretical Analysis of Tunneling GNRFET under Local Compressive Uniaxial Strain

Abbaszadeh

Yousefi

Aderang

2020

ECS J. Solid State Sci. Technol.

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By applying %3 compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of tunneling graphene nanoribbon field-effect transistor (T-GNRFET), we propose a new local-strained source and channel (LSSC) T-GNRFET. Quantum simulations of the proposed structure have been done in mode-space non-equilibrium Green's function (NEGF) approach in ballistic regime. Simulation results show that in comparison with the conventional T-GNRFET of the same dimensions, the ONcurrent of the proposed structure has been improved considerably. Besides, the proposed structure enjoys better analog characteristics such as transconductance (g m ) and unity-gain frequency (f t ).

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Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade

Cited by 4 publications

References 17 publications

Voltage mirror circuit by carbon nanotube field effect transistors for mirroring dynamic random access memories in multiple‐valued logic and fuzzy logic

Voltage mirror circuit by carbon nanotube field effect transistors for mirroring dynamic random access memories in multiple‐valued logic and fuzzy logic

Improved Switching Performance of Nanoscale p-i-n Carbon Nanotube Tunneling Field-Effect Transistors Using Metal-Ferroelectric-Metal Gating Approach

Theoretical Analysis of Tunneling GNRFET under Local Compressive Uniaxial Strain

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