Study on the Gold-Gold Thermocompression Bonding for Wafer-Level Packaging

Abstract

The study is performed to implement the Gold-Gold thermocompression bonding for the wafer-level packaging of MEMS chips. Numerous experimental attempts have been carried out to select the metal film adhesive to avoid the Au-Si melt together and optimize bonding processes to intensify the Au-Au eutectic bonding. Finally the results display that the eutectic bonding of the gold-gold are arrived as electrical as well as mechanical interconnection of the MEMS structure and as seal as well as bonding intension.

Effect of ultrathin palladium layer in achieving a low temperature and pressure wafer level aluminum to aluminum bonding

“…The direct metal thermocompression bonding with the surface to be protected or surface pretreated methods can be achievable at low temperatures will be promising solutions for high strength, fine frame vacuum-sealed MEMS packages. Conventionally, copper (Cu), gold (Au), and aluminum (Al) metals are typically used for thermo-compression bonding [12,[18][19][20]. However, there was much work on-going in terms of achieving low-temperature direct bonding of Au-Au or Cu-Cu [12,18,19,[21][22][23][24].…”

“…Conventionally, copper (Cu), gold (Au), and aluminum (Al) metals are typically used for thermo-compression bonding [12,[18][19][20]. However, there was much work on-going in terms of achieving low-temperature direct bonding of Au-Au or Cu-Cu [12,18,19,[21][22][23][24]. However, in comparison to Au and Cu, Al is also a capable material for the MEMS packaging and 3D IC heterogeneous integration at a low cost [25].…”