Study on the response of InAs nanowire transistors to H2O and NO2

Zhang, Xintong; Fu, Mengqi; Li, Xing; Shi, Tuanwei; Ning, Zhiyuan; Yang, Tao; Chen, Qing

doi:10.1016/j.snb.2014.11.142

Cited by 14 publications

(23 citation statements)

References 27 publications

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“…Control studies were also performed in vacuum and dry pure He gas. We aimed to identify whether structural/surface differences between the ZB and WZ phases affect their response to gaseous atmospheres, partly to address a standing question from our earlier work [11] and partly for interest in potential gas sensing applications [8,10].…”

Section: Discussionmentioning

confidence: 99%

“…As a result, InAs nanowire conductivity should also be useful for sensing. Several groups have demonstrated gas/biochemical sensing for InAs nanowires with mixed/unknown phase structure [8,9,10], but as yet there has been no reports on how gas sensing varies between purephase wurtzite (WZ) and pure-phase zinc blende (ZB) nanowires. There is good reason to investigate and expect differences -the surface facet structure differs significantly between the two phases [6] and our earlier work revealed differences in electronic properties that were possibly associated with that difference in surface facet structure [11].…”

Section: Introductionmentioning

confidence: 99%

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The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

et al. 2017

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Abstract. We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N 2 and O 2 , and N 2 bubbled through liquid H 2 O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by 2 − 3 orders of magnitude, increases on-off ratio and significantly reduces sub-threshold slope. The key difference is the greater sensitivity of WZ to low adsorbate level. We attribute this to facet structure and its influence on the separation between conduction electrons and surface adsorption sites. We highlight the important role adsorbed species play in nanowire device characterisation. WZ is commonly thought superior to ZB in InAs nanowire transistors. We show this is an artefact of the moderate humidity found in ambient laboratory conditions: WZ and ZB perform equally poorly in the dry gas limit yet equally well in the wet gas limit. We also highlight the vital role density-lowering disorder has in improving gate characteristics, be it stacking faults in mixed-phase WZ or surface adsorbates in pure-phase nanowires.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

et al. 2017

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“…Compound semiconductor NWs have also been applied in FET-based sensors [60,61]. Gao and coworkers applied NWs of InAs, which is a III−V semiconductor, to fabrication of a gas-sensitive FET [60].…”

Section: Gas-sensitive Fets Using Metal Oxide Nws or Compound Semiconmentioning

confidence: 99%

Field-Effect Transistors for Gas Sensing

Yoshizumi¹,

Miyahara²

2017

Different Types of Field-Effect Transistors - Theory and Applications

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This chapter reviews gas-sensitive field-effect transistors (FETs) for gas sensing. Although various types of gas sensors have been reported, this review focuses on FET-based sensors such as catalytic-gate FETs, solid electrolyte-based FETs, suspended-gate FETs, and nanomaterial-based FETs. For recognition of analytes in the gas phase, the combination of cross-reactive gas sensor arrays with pattern recognition methods is promising. Crossreactive sensor arrays consist of gas sensors that have broad and differential sensitivity. Signals from the cross-reactive sensor array are processed using pattern recognition methods. Reports of FET-based sensor arrays combined with pattern recognition methods are briefly reviewed.

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“…The latter plays a key role in the fabrication of InAs NWFETs, allowing for facile formation of ohmic contacts [ 28 ] to produce devices with high signal-to-noise ratios. To date, devices based on InAs have shown responses to alcoholic vapours, H 2 O, NO and NO 2 [ 29 , 30 , 31 , 32 ]. Using an ion-sensitive (IS) FET structure, pH and proteins have also been detected in solution [ 33 ].…”

Section: Introductionmentioning

confidence: 99%

“…While most reports of NWFET sensors attribute the sensing response to a conductance change caused by alterations of surface potential (i.e., a gating effect due to adsorption of charged analytes) [ 18 , 21 , 33 , 34 ], few independent groups have discussed the impact of the sensing interaction on other transport parameters obtained by field-effect measurements (e.g., carrier mobility, threshold voltage, subthreshold swing) [ 29 , 32 , 35 , 36 , 37 ]. This is perhaps due to the prevalence of biosensing work that employs dielectric-capped ISFETs as compared to gas/chemical sensing that typically uses FETs with exposed channels and reactive surface states.…”

Section: Introductionmentioning

confidence: 99%

Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors

Tseng

Lynall

Savelyev

et al. 2017

Sensors

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Nanowire-based field-effect transistors (FETs) have demonstrated considerable promise for a new generation of chemical and biological sensors. Indium arsenide (InAs), by virtue of its high electron mobility and intrinsic surface accumulation layer of electrons, holds properties beneficial for creating high performance sensors that can be used in applications such as point-of-care testing for patients diagnosed with chronic diseases. Here, we propose devices based on a parallel configuration of InAs nanowires and investigate sensor responses from measurements of conductance over time and FET characteristics. The devices were tested in controlled concentrations of vapour containing acetic acid, 2-butanone and methanol. After adsorption of analyte molecules, trends in the transient current and transfer curves are correlated with the nature of the surface interaction. Specifically, we observed proportionality between acetic acid concentration and relative conductance change, off current and surface charge density extracted from subthreshold behaviour. We suggest the origin of the sensing response to acetic acid as a two-part, reversible acid-base and redox reaction between acetic acid, InAs and its native oxide that forms slow, donor-like states at the nanowire surface. We further describe a simple model that is able to distinguish the occurrence of physical versus chemical adsorption by comparing the values of the extracted surface charge density. These studies demonstrate that InAs nanowires can produce a multitude of sensor responses for the purpose of developing next generation, multi-dimensional sensor applications.

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Study on the response of InAs nanowire transistors to H2O and NO2

Cited by 14 publications

References 27 publications

The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

Field-Effect Transistors for Gas Sensing

Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors

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