Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs

Голенков, А. Г.

doi:10.15407/spqeo18.01.040

Cited by 3 publications

(1 citation statement)

References 14 publications

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“…The dependences of NEP opt (ν) for AlGaN/GaN HFETs are not presented here because of the lack of enough number of experimental data, except the known data [47][48][49][50][51], but these data are away from the calculated ones, and they were obtained not for optimal W values and, as a rule, they were obtained for unknown antenna parameters. Some parameters used for NEP opt estimations were taken the same as for Si MOSFET and thus are not fully appropriate.…”

Section: Thz Rectifying Detector Parametersmentioning

confidence: 99%

Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 2. P. 129-138. DOI: http://dx.doi.org/10.15407/spqeo19.02.129 Performance limits of terahertz zero biased rectifying detectors for direct detection

Голенков¹,

Sizov²

2016

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in this paper. Some basic extrinsic parasitics and detector-antenna impedance matching were taken into account. It has been concluded that, in dependence on radiation frequency, detector and antenna parameters, the ultimate optical responsivity (ℜ opt ) and optical noise equivalent power (NEP opt ) of FETs in the broadband detection regime can achieve ℜ opt ~ 23 kV/W and NEP opt ~ 1⋅10-12 W/Hz 1/2 , respectively. At low radiation frequency ν in the THz spectral region the NEP opt of SBD detectors can be better by a factor of ~1.75 as compared to that of Si MOSFETs (metal oxide semiconductor FETs) and GaAlN/GaN HFETs (heterojunction FETs) with comparable device impedances.

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Section: Thz Rectifying Detector Parametersmentioning

confidence: 99%

Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 2. P. 129-138. DOI: http://dx.doi.org/10.15407/spqeo19.02.129 Performance limits of terahertz zero biased rectifying detectors for direct detection

Голенков¹,

Sizov²

2016

Semicond. Phys. Quantum Electron. Optoelectron.

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Continuous Wave Terahertz Sensing Using GaN HEMTs

Javadi

Delgado-Notario

Masoumi

et al. 2018

Physica Status Solidi (a)

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A commercial GaN high electron mobility transistor (HEMT) is investigated as efficient detector of terahertz radiations. Enhancement of the photoresponse in excess of one order of magnitude (up to 1 kV W−1) is obtained when a constant drain‐to‐source current is applied. The photoresponse remains unchanged with chopping frequency up to 5 kHz demonstrating a high‐speed response of GaN HEMT detectors. It is demonstrated that the bounding wires play an important role to couple terahertz radiations to the channel of the device. Terahertz imaging of hidden objects by using GaN HEMTs as a sensor is also demonstrated.

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Development of terahertz approaches for optoelectronics and the SPQEO journal

Tsybrii,

Golenkov,

Maksimenko

et al. 2024

SPQEO

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This article discusses the main trends in the development of terahertz (THz) optoelectronics, which bridge the gap between traditional electronics and the unexplored part of electromagnetic spectrum known as the “THz gap”. Each of the THz bands: the submillimeter range (0.1 to 0.3 THz), the low range (0.3 to 1 THz), the midrange (1 to 3 THz), the high range (3 to 10 THz), and the ultrafast range (above 10 THz) requires development of specific research approaches, materials, devices and applications. This article reports on the contribution of SPQEO journal to the development of THz optoelectronics over the past decade, in particular, (i) spintronics phenomena induced by THz radiation in narrow-gap HgCdTe thin films under an external DC electric field; (ii) the possibility of realizing two-color uncooled narrow-gap mercury-cadmium-telluride semiconductor as a direct detection bolometer in the sub-THz range and an IR photoconductor in the 3–10 µm range with the parameters suitable for many applications; (iii) design and fabrication of aspherical polystyrene lenses for the THz range; (iv) the possibility of using the convolutional neural network method for image recognition from THz scanners, etc.

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Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs

Cited by 3 publications

References 14 publications

Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 2. P. 129-138. DOI: http://dx.doi.org/10.15407/spqeo19.02.129 Performance limits of terahertz zero biased rectifying detectors for direct detection

Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 2. P. 129-138. DOI: http://dx.doi.org/10.15407/spqeo19.02.129 Performance limits of terahertz zero biased rectifying detectors for direct detection

Continuous Wave Terahertz Sensing Using GaN HEMTs

Development of terahertz approaches for optoelectronics and the SPQEO journal

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