Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss for mobile communication systems

Makioka, S.; Anda, Yoshiharu; Miyatsuji, K.; Ueda, Daisuke

doi:10.1109/16.936499

Cited by 52 publications

(18 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1) CMOS switches, on 0.13 μm Si at 0. , and on 0.5 μm siliconon-sapphire (SOS) [31] in Fig. 6; 2) pHEMT switches, on 0.5 μm GaAs at 2 GHz [31] and on 0.15 and 0.5 μm GaAs at 0.9 GHz [32] in Fig. 7.…”

Section: Semiconductor-switched Capacitorsmentioning

confidence: 99%

On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors

Tiggelman

Reimann

Rijs

et al. 2009

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Abstract-A benchmark of tunable and switchable devices at microwave frequencies is presented on the basis of physical limitations to show their potential for reconfigurable cellular applications. Performance limitations are outlined for each given technology focusing on the quality factor (Q) and tuning ratio (η) as figures of merit. The state of the art in terms of these figures of merit of several tunable and switchable technologies is visualized and discussed. If the performance of these criteria is not met, the application will not be feasible. The quality factor can typically be traded off for tuning ratio. The benchmark of tunable capacitor technologies shows that transistor-switched capacitors, varactor diodes, and ferroelectric varactors perform well at 2 GHz for tuning ratios below 3, with an advantage for GaAs varactor diodes. Planar microelectromechanical capacitive switches have the potential to outperform all other technologies at tuning ratios higher than 8. Capacitors based on tunable dielectrics have the highest miniaturization potential, whereas semiconductor devices benefit from the existing manufacturing infrastructure.

show abstract

Section: Semiconductor-switched Capacitorsmentioning

confidence: 99%

On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors

Tiggelman

Reimann

Rijs

et al. 2009

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…These devices are key components of radars, wireless base stations, satellite communications, and many other high-frequency systems. 2,3 Recently, high power rf switches made of AlGaN / GaN heterostructure field-effect transistors ͑HFETs͒ demonstrated a superior performance in terms of maximum power density, bandwidth, operation temperature, and high breakdown voltage, which made them excellent candidates for high power wireless systems. 4 Even higher rf powers have been achieved using insulated gate AlGaN / GaN metal-oxide-semiconductor heterostructure field-effect transistors ͑MOSHFETs͒.…”

Section: Iii-nitride Transistors With Capacitively Coupled Contactsmentioning

confidence: 99%

III-nitride transistors with capacitively coupled contacts

Simin

Yang

Koudymov

et al. 2006

Applied Physics Letters

View full text Add to dashboard Cite

Al Ga N ∕ Ga N heterostructure field-effect transistor design using capacitively coupled contacts (C3HFET) is presented. Insulated-gate [C3 metal-oxide-semiconductor HFET (C3MOSHFET)] has also been realized. The capacitively coupled source, gate, and drain of C3 device do not require annealed Ohmic contacts and can be fabricated using gate alignment-free technology. For typical AlGaN∕GaN heterostructures, the equivalent contact resistance of C3 transistors is below 0.6Ωmm. In rf-control applications, the C3HFET and especially the C3MOSHFET have much higher operating rf powers as compared to HFETs. C3 design is instrumental for studying the two-dimensional electron gas transport in other wide band gap heterostructures such as AlN∕GaN, diamond, etc., where Ohmic contact fabrication is difficult.

show abstract

“…Traditional p-i-n diode based T/R switches encounter additional dc losses because the diode consumes power. This is why there has been quite a strong drive to design switches based on active devices [1]- [3], most of the research to date being done using GaAs devices [4], [5] AlGaN/GaN heterostructure field-effect transistor (HFET) is one of the most promising new microwave devices, which has been a topic of intensive investigations since the first report in 1991 [6]. These devices exploit high sheet carrier density ( 10 cm , an order of magnitude higher than that for GaAs/AlGaAs heterostructures) and high room temperature mobility ( 2000 cm V s).…”

Section: Introductionmentioning

confidence: 99%

Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs

Koudymov

Simin

et al. 2002

IEEE Electron Device Lett.

View full text Add to dashboard Cite

Abstract-We demonstrate a novel RF switch based on a multifinger AlGaN/GaN MOSHFET. Record high saturation current and breakdown voltage, extremely low gate leakage current and low gate capacitance of the III-N MOSHFETs make them excellent active elements for RF switching. Using a single element test circuit with 1-mm wide multifinger MOSHFET we achieved 0.27 dB insertion loss and more than 40 dB isolation. These parameters can be further improved by impedance matching and by using submicron gate devices. The maximum switching power extrapolated from the results for 1A/mm 100 m wide device exceeds 40 W for a 1-mm wide 2-A/mm MOSHFET.Index Terms-Field-effect transistor (FET), GaN, HEMT, heterostructure field-effect transistor (HFET), MOSHFET, RF, switch, wireless.

show abstract

Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss for mobile communication systems

Cited by 52 publications

References 8 publications

On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors

On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors

III-nitride transistors with capacitively coupled contacts

Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs

Contact Info

Product

Resources

About