Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate

Abstract

Hetero-epitaxial CVD growth of 3C-SiC on a Si(110) substrate gives a (111) crystal with low defects density. However, double positioning growth often disturbs growth of a single crystal. The growth on an off-axis Si(110) substrate suppressed propagation of the double positioning defects in the grown layer effectively. Cross-sectional transmission electron microscopy revealed the details of the suppression process on the off-axis substrate. The suppression mechanism and the origin of the defects formation at double positioning boundaries were interpreted by the growth model based on an anisotropic growth rate on (111) plane of 3C-SiC.

Evaluations of crystal defects of 3C‐SiC film on Si(110) substrate

“…The onset of this twinning can also be related to a disturbance during the initial stage of the growth at the interface. To eliminate this twinning within a rotated domain, use of vicinal substrates should be operative . By introducing steps at the interface, 3C‐SiC domains started at an upper terrace will dominate the stacking and hence reduce the twinning.…”

Toward high-quality 3C–SiC membrane on a 3C–SiC pseudo-substrate

“…Then, the (110) orientation which results to a faceted surface is more rough compared to the (111) orientation. Nevertheless, the 3C-SiC(111) growth on Si(110) suffers from the difference in symmetries between the three-fold symmetric 3C-SiC(111) and the mirror symmetric Si(110) which leads to the formation of the double positioning domains [11]. For the moment, the detailed mechanism responsible of this orientation switch is unclear but some complementary experiments are currently under investigation.…”

High‐speed heteroepitaxial growth of 3C‐SiC (111) thick films on Si (110) by laser chemical vapor deposition

“…All the grains in the films presented a six-fold symmetry, indicating the heteroepitaxial growth of 3C-SiC (111) on Si (110) substrate because that the 3C-SiC (111) films has a three-fold lateral symmetry and the Si (110) substrate has a two-fold symmetry. 25 3C-SiC (111) epitaxial films should be triangular pyramid texture with three-fold symmetry, while the triangular pyramid grains would rotate along the [111] axis when 3C-SiC films presented inverse domain growth along the [111] orientation. The hexagonal grains were generated by two sets of triangular grain reached over each other face to face, as shown in Figure 10 (C) and as marked in Figure 10 (A), respectively.…”

“…However, Si (110) was seldom used as substrate for epitaxial growth because of special reconstruction and strong anisotropy. Due to the smaller lattice mismatch between 3C-SiC (111) and Si (110), [24][25][26] Si (110) is a potential candidate of epitaxial growth for high quality 3C-SiC (111). Up to now, only a few literatures reported the epitaxial growth of 3C-SiC (111) films with lower defects density on Si (110) substrate by low pressure chemical vapor deposition (LPCVD) 27 and atmospheric pressure chemical vapor deposition (APCVD).…”