Suppression of Leakage Current in Solid-Phase Crystallization Silicon Thin-Film Transistors Employing Off-State-Bias Annealing

Abstract

We investigate numerically the response of an atomic Bose-Einstein condensate to a weakly-elliptical rotating trap over a large range of rotation frequencies. We analyse the quadrupolar shape oscillation excited by rotation, and discriminate between its stable and unstable regimes. In the latter case, where a vortex lattice forms, we compare with experimental observations and find good agreement. By examining the role of thermal atoms in the process, we infer that the process is temperature-independent, and show how terminating the rotation gives control over the number of vortices in the lattice. We also study the case of critical rotation at the trap frequency, and observe large centre-of-mass oscillations of the condensate.

P‐17: Outstanding Image Sticking Performance via L‐SWTFT Channel Ā Tuning in AMOLED Display Application

“…As shown in Figure 3, due to the influence of shortchannel effect, the shorter the channel length, the more proportion the affected channel length. Accordingly, the Drain Induced Barrier Lowering (DIBL) effect will be enhanced which can be seen that the on current (Ion) increases nonlinearly with the decrease of L-SWTFT gate length, just exhibited in Figure 4a [13][14][15]. According to the simulation results presented in Figure 4b, when Ion increases, the voltage of N2 node will be closer to the ideal voltage in voltage input phase.…”

14‐3: Extremely Short‐Channel LTPS TFT Technologies for High‐Performance Low‐Power, and Reliable AMOLED displays

“…For fast refresh-rate and/or high-resolution panels, the scan-on-time is reduced to be shorter (e.g., ≤2.0㎲), thus faster charging process to the storage capacitance (Cst) through TFTs is required. On the other hand, for low frame rate, off-state leakage current (Ioff) must be suppressed to hold the voltage at the storage node during the emission period [2], [3]. Most results of field effect transistors including LTPS TFTs show that Ion increases as channel length (L) decreases.…”

5‐3: Experimental and Physics‐Based Analysis of Leakage Currents for LTPS TFTs in AMOLED Displays

“…The leakage currents of LTPS TFTs are the crucial obstacle for low-power AMOLED displays [1]. Present OLED displays from smart phones to smart devices such as autonomous vehicles and artificial intelligence products demand for high-performance panels operating at blazing-fast refresh rate [2].…”