Surface group-modified MXene nano-flake doping of monolayer tungsten disulfides

Abstract

A new chemical (MXene) doping strategy to modulate the exciton and trion for achieving high photoluminescence (PL) efficiency of WS2 is reported.

Interfacial interactions of doped-Ti3C2 MXene/MAPbI3 heterostructures: surfaces and the theoretical approach

“…Previously, Tao et al demonstrated that the charge transfer ability of Ti 3 C 2 T x can be controlled by introducing different types of surface functional groups. 67 They constructed WS 2 /Ti 3 C 2 T x heterostructure and showed that F-MXene has more efficient charge transfer than N-MXene. Thus, our findings demonstrate the potential of F-MXene to tune the electronic structure of perovskite-based optoelectronic devices effectively.…”

Optically Active MXenes in Van der Waals Heterostructures

“…A study by Tao et al revealed the MXenes' ability to regulate the trion-to-exciton transition of WS 2 via a charge transfer mechanism, resulting in a fivefold enhancement in photoluminescence efficiency. [256] They showed that upon drop-casting Fterminated Ti 3 C 2 T x on WS 2 , the neutral exciton peak becomes dominant compared to the negative trion peak, owing to the electron transfer from WS 2 to Ti 3 C 2 T x . Furthermore, by reducing the F-terminations on Ti 3 C 2 T x MXene via thermal annealing, the electron-withdrawing ability of Ti 3 C 2 T x was weakened, resulting in lower photoluminescence enhancement compared to F-terminated Ti 3 C 2 T x .…”

Recent Progress in Short‐ to Long‐Wave Infrared Photodetection Using 2D Materials and Heterostructures

“…Constructing multifunctional hybrid heterostructures with a different and fruitful band alignment will undoubtedly break the limitation and expands the range of the spectral response beyond the bandgap of individual materials. [ 237 ] In particular, type‐II band alignment between 2D semiconductors can facilitate the interlayer excitation and transition of sub‐bandgap photons at the telecommunication wavelength. A novel vdW TMD‐based photodiode composed of (n‐BP/p‐PdSe 2 ) exhibits a gate tunable and very high photoresponsivity of 4.53 × 10 5 and 1.63 × 10 5 A W −1 under a NIR wavelength of 1064 and 1310 nm, respectively, together with high detectivity and EQE.…”