Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers

Einfeldt, S.; Reitmeier, Z. J.; Davis, R. F.

doi:10.1016/s0022-0248(03)01039-x

Cited by 44 publications

(25 citation statements)

References 54 publications

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“…The GaN surfaces have a roughness of about 0.3 nm. The GaN layers appear to have grown in a step-flow mode, as previously reported [7]. …”

Section: On-axis 4h-sicsupporting

confidence: 62%

“…[6,7] that the strain state of GaN is dependent on GaN thickness: thin GaN layers are under in-plane compression, and thicker layers gradually change to in-plane tension. The actual strain state of GaN can be thought of as a superposition of compression from the nucleation layer and tension from the difference in thermal expansion with the substrate.…”

Section: Strainmentioning

confidence: 99%

See 1 more Smart Citation

Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC

Boeykens

Leys

Germain

et al. 2004

Journal of Crystal Growth

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“…The GaN surfaces have a roughness of about 0.3 nm. The GaN layers appear to have grown in a step-flow mode, as previously reported [7]. …”

Section: On-axis 4h-sicsupporting

confidence: 62%

Section: Strainmentioning

confidence: 99%

Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC

Boeykens

Leys

Germain

et al. 2004

Journal of Crystal Growth

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“…Additionally, the o/2y scans clearly indicate the decrease in period of the Pendellosung fringes as the film thickness increases. Finally, the peak position also moves further away from the SiC peak indicating a shift in the strain state of the AlN [9]. These changes in the AlN layer are seen to impact the GaN buffer grown above.…”

Section: Resultsmentioning

confidence: 92%

Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability

Green¹,

Gibb²,

Hosse³

et al. 2004

Journal of Crystal Growth

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“…The samples were degreased with C 2 Cl 4 , acetone, and methanol and then etched in an acid (pH Ͻ 1) HCl:HF ϭ 15:1 solution for 2 min. This procedure resulted in an improvement of the wet cleaning in comparison to a conventional RCA procedure [5][6][7] and etching in a HF:H 2 O (1:10). After wet etching, the samples were exposed to an atomic-hydrogen flux produced by a remote, H 2 radiofrequency (13.56 MHz), plasma source.…”

Section: Methodsmentioning

confidence: 99%

Modification of 4H-SiC and 6H-SiC(0001)Si surfaces through the interaction with atomic hydrogen and nitrogen

Losurdo

Giangregorio

Capezzuto

et al. 2005

Journal of Elec Materi

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The interaction of 4H-SiC(0001) Si and 6H-SiC(0001) Si surfaces with atomic hydrogen and atomic nitrogen produced by remote radio-frequency plasmas is investigated. The kinetics of the surface modifications is monitored in real time using ellipsometry, while chemical modifications of the surface are characterized using x-ray photoelectron spectroscopy (XPS). Film morphological properties are assessed with atomic force microscopy (AFM). A two-stage substrate preparation procedure is described that effectively removes oxygen from the SiC surface at low (200°C) temperature. In the first step, the SiC surface is etched with an HCl/HF acid solution as an alternative to the conventional HF(1%)-H 2 O solution. The HCl/HF etch provides effective hydrogen passivation of the SiC surface. In the second step, the SiC surface is exposed to atomic hydrogen that selectively interacts with residual oxygen. In addition, the temperature dependence of the nitridation of SiC surfaces has also been investigated. It is found that interaction of SiC surfaces with atomic hydrogen at 200°C provides clean, smooth, and terraced surfaces suitable for epitaxial growth. In contrast, SiC surface exposure at high temperature (750°C) to atomic hydrogen and nitrogen results in very rough and disordered Si-rich surfaces. Finally, we find that the 4H-SiC surface is more reactive than the 6H-SiC surface to both species studied, independent of temperature. Surface geometry and electronic factors responsible for the observed reactivities are discussed.

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Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers

Cited by 44 publications

References 54 publications

Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC

Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC

Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability

Modification of 4H-SiC and 6H-SiC(0001)Si surfaces through the interaction with atomic hydrogen and nitrogen

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