Surface morphology of metal films deposited on mica at various temperatures observed by atomic force microscopy

Adsorption State and Morphology of Anthraquinone-2-carboxylic Acid Deposited from Solution onto the Atomically-Smooth Native Oxide Surface of Al(111) Films Studied by Infrared Reflection Absorption Spectroscopy, X-ray Photoelectron Spectroscopy, and Atomic Force Microscopy

“…28,29,34,35 However, the smaller value of W/Rms = 1.31 ± 0.58 than 2.36 shows that the surface heights distribute closely at 0 nm and the shape is not Gaussian.…”

“…Thus, W is represented by 2.36Rms and most (>95%) areas of the peak are in the 2W region between ±W. 31,[33][34][35] The average values and standard deviations of W, Rms, and W/Rms of the images are given in Table 1, where the numbers in parentheses are those of the images used for the calculations. 35 The surface of the oxidized Al film prepared at room temperature is rough (Rms = 1.80 ± 0.94 nm and W = 1.93 ± 0.39 nm).…”

“…The peak in the histogram represents the distribution of zij and its width (full width at half maximum, W) is a good measure of the surface roughness. [30][31][32][33][34][35][36] If zij distributes randomly around the surface height at 0 nm, the resulting peak has a Gaussian shape with the standard deviation Rms. Thus, W is represented by 2.36Rms and most (>95%) areas of the peak are in the 2W region between ±W.…”

“…[28][29][30][31][32][33][34][35] The deposition was conducted in a metal bell-jar evaporator equipped with a liquid-nitrogentrapped 6 in. diffusion-pump.…”

Spectroscopic analysis of a nanostructure roughness of plasma-deposited Au films using organic monolayer

“…The annealing process during the deposition did not form a single crystal but increased the size of Au clusters and surface roughness. This is because Au on mica substrate has a large diffusion coefficient [25] and form (111) surface only at high-temperature (>473 o C) regardless to deposition rate [26]. However, this fact is in contrast to a post-process annealing of Au thin films on mica substrate forming a large single crystal typically at 400~500 o C [14][15][16].…”