Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic-Layer-Deposited AlO<sub><i>x</i></sub>

Arafune, Koji; Miki, Shohei; Matsutani, Ryosuke; Hamano, Junpei; Yoshida, Haruhiko; Tachibana, Takeshi; Lee, Hyun Ju; Ogura, Atsushi; Ohshita, Yoshio; Satoh, S.

doi:10.7567/jjap.51.04dp06

Cited by 10 publications

(10 citation statements)

References 25 publications

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“…However, few studies related to the surface passivation of c-Si using AlO x prepared by O 3 -based batch ALD have been reported so far. 13,21,22) In this study, we investigate the effects of postdeposition annealing (PDA) as well as the deposition temperature (T dep ) and thickness of AlO x on the surface passivation quality and thermal stability of AlO x deposited by O 3 -based batch ALD. We also study the changes in the physical and chemical properties of AlO x passivation layers and AlO x /c-Si interfaces to understand the origin of chemical and field effect passivation of c-Si by AlO x .…”

Section: Introductionmentioning

confidence: 99%

Detailed study of the effects of interface properties of ozone-based atomic layer deposited AlO_x on the surface passivation of crystalline silicon

Lee

Sawamoto

Ikeno

et al. 2014

Jpn. J. Appl. Phys.

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The effects of interface properties such as a negative fixed charge density and an interface trap density on the surface passivation of crystalline Si by O3-based batch ALD AlO x were studied. High-quality surface passivation with S max of ∼10 cm/s was obtained from the AlO x samples deposited at 200 °C after annealing. This feature is attributed to the excellent field effect passivation by the high negative fixed charge density of ∼−5 × 1012 cm−2 and chemical passivation, which reduces the interface trap density to ∼1 × 1011 eV−1 cm−2. The annealed AlO x samples deposited at 200 °C also show high thermal stability during firing at 850 °C. Additionally, we found that the formation of a thin SiO x interlayer is essential for the formation of a high negative fixed charge density that induces strong field effect passivation, and that defect passivation at the Si/SiO x interface by diffused hydrogen from AlO x layers is the origin of chemical passivation.

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Section: Introductionmentioning

confidence: 99%

Detailed study of the effects of interface properties of ozone-based atomic layer deposited AlO_x on the surface passivation of crystalline silicon

Lee

Sawamoto

Ikeno

et al. 2014

Jpn. J. Appl. Phys.

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“…We have investigated the Y20r Zr02 composite film (YZO) for the field effect passivation and found significantly large negative fixed charge density [8]. In the case, we also verified the negative fixed charges were originated in the film, therefore they increased with increasing the film thickness [9]. On the other hand, the AIO" which is well known as the superior passivation film for p-type Si, has electrical dipole at the interface between Si and provides the similar desired effects as negative fixed charges.…”

Section: Introductionmentioning

confidence: 52%

Study on surface passivation by YZO/AlO<inf>x</inf> stacking double layer for crystalline Si solar cells

Katsumata

Ikeno

Satoh

et al. 2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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We investigated stacking double layer structure, the Y 203-Zr02 composite film (YZO) on AIO" for the field effect passivation with high negative fixed charge densities on p-type Si. The composition spread YZO films were deposited at room temperature by using combinatorial sputtering technique. The fixed charge densities were extracted from the flat band voltage shift in the capacitance-voltage characteristics. The as-deposited Zr02 film incorporated with 15% Y 203 stacking on the ALD AIOx structure showed the highest negative fixed charge of -1.9 x 10 1 2 cm· 2 . The field effect passivation can be controlled by the negative fixed charges in the YZO film depending on the composition and dipole uniformly formed at AIOx/Si interface. After annealing in the oxygen atmosphere, passivation properties deteriorated caused by the AI diffusion at the YZO/AIOx interface. Index Terms -stacking double layer, combinatorial technique, capacitance-voltage characteristics, field effect passivation, negative fixed charge density.

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“…As we had already reported, Si diffused into ALD AlO x films through a thin SiO x layer. 9) Because T dep of MCVD is higher than that of ALD, as mentioned above, Si diffusion might also occur in MCVD AlO x samples. Therefore, we defined layers 1 and 2 as AlO x and Si-diffused AlO, respectively.…”

Section: Mcvdmentioning

confidence: 94%

“…It is known that the negative fixed charge density is increased by post deposition thermal annealing (PDA). Major deposition techniques for AlO x films are atomic layer deposition (ALD), [1][2][3][4][5][6][7][8][9][10][11][12] plasmaenhanced chemical vapor deposition (PECVD), 13) sputtering, 14) and atmospheric pressure chemical vapor deposition (APCVD). 15) These techniques allow for fine control of film thickness and the fabrication of high-quality AlO x films.…”

Section: Introductionmentioning

confidence: 99%

Passivation properties of aluminum oxide films deposited by mist chemical vapor deposition for solar cell applications

Miki

Iguchi

Kitano

et al. 2015

Jpn. J. Appl. Phys.

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Aluminum oxide (AlO x ) films were deposited by mist chemical vapor deposition (MCVD) in air for p-type crystalline silicon, and the effects of the deposition temperature (T dep ) and AlO x film thickness on the maximum surface recombination velocities (S max ) were evaluated. It was found that S max was improved with increasing T dep . The AlO x film deposited at 400 °C exhibited the best S max value of 2.8 cm/s, and the passivation quality was comparable to that of AlO x deposited by other vacuum-based techniques. S max was also improved with increasing film thickness. When the film thickness was above 10 nm, S max was approximately 10 cm/s. From the Fourier transform infrared spectra, it was found that the AlO x films deposited by MCVD consisted of an AlO x layer and a Si-diffused AlO x layer. In addition, it is important for the layers to be thick enough to obtain high-quality passivation.

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Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic-Layer-Deposited AlO_x

Cited by 10 publications

References 25 publications

Detailed study of the effects of interface properties of ozone-based atomic layer deposited AlO_x on the surface passivation of crystalline silicon

Detailed study of the effects of interface properties of ozone-based atomic layer deposited AlO_x on the surface passivation of crystalline silicon

Study on surface passivation by YZO/AlO<inf>x</inf> stacking double layer for crystalline Si solar cells

Passivation properties of aluminum oxide films deposited by mist chemical vapor deposition for solar cell applications

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Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic-Layer-Deposited AlOx

Cited by 10 publications

References 25 publications

Detailed study of the effects of interface properties of ozone-based atomic layer deposited AlOx on the surface passivation of crystalline silicon

Detailed study of the effects of interface properties of ozone-based atomic layer deposited AlOx on the surface passivation of crystalline silicon

Study on surface passivation by YZO/AlO<inf>x</inf> stacking double layer for crystalline Si solar cells

Passivation properties of aluminum oxide films deposited by mist chemical vapor deposition for solar cell applications

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Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic-Layer-Deposited AlO_x

Detailed study of the effects of interface properties of ozone-based atomic layer deposited AlO_x on the surface passivation of crystalline silicon

Detailed study of the effects of interface properties of ozone-based atomic layer deposited AlO_x on the surface passivation of crystalline silicon