Surface Spot Defects Inspection of Multi-Crystalline Silicon Wafers Based on HALCON

Abstract

As a common kind of surface defects on multi-crystalline silicon solar cells (about 65% of total defects). Based on HALCON image processing library, an automatic silicon wafer surface spot defects detection and classification system has been developed: captured color images via CCD image sensor, located wafers and spots, extracted the spot features, computed and separated the qualified regions from the unqualified ones by SVM classifier. The experimental result showed a high accuracy of 95.7% and fast image analyzing and classifying process (less than 600ms).

Research into effect of electrochemical etching conditions on the morphology of porous gallium arsenide

“…A level of doping plays a decisive role for the configuration of nanostructures [54]. The number of etching pits on the surface of a crystal depends on the existence of point defects [55]. In addition, it is necessary to take into consideration that the self-organization processes occur during electrochemical treatment of any semiconductors.…”