Surface states and origin of the Fermi level pinning on nonpolar GaN(11¯00) surfaces

Иванова, Л. Д.; Borisova, S. D.; Eisele, H.; Dähne, M.; Laubsch, A.; Ebert, Ph.

doi:10.1063/1.3026743

Cited by 59 publications

(58 citation statements)

References 18 publications

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“…For surfaces at which the Fermi energy is pinned by a high defect density inside of the band gap, the normalized conductivity exhibits a surface band gap equal to the bulk band gap (Fig. 5) [18]. Momentum-sensitive tunneling spectroscopy indicates a direct surface band gap at the Γ-point [60], in agreement with the theoretical calculations [44,58].…”

Section: Wurtzite Gansupporting

confidence: 78%

“…STM experiments on GaN (1010) surfaces also point toward a Fermi energy position within the fundamental band gap [18,25], as typically expected for non-polar III-V compound semiconductor surfaces.…”

Section: Energetic Position Of the Fermi Levelsupporting

confidence: 64%

“…2a) [18] as well as by atomically resolved scanning tunneling microscopy (STM) images (Fig. 2b) [18,25]. For the GaN(1120) surface an STM observation suggests also a 1 1 ¥ surface unit cell [24].…”

Section: Surface Unit Cellmentioning

confidence: 87%

“…2a) [18] as well as by atomically resolved scanning tunneling microscopy (STM) images (Fig. 2b) [18,25].…”

Section: Surface Unit Cellmentioning

confidence: 99%

“…STM experiments at the GaN(1010) surface suggest no electronic surface states in the fundamental band gap [18,25]. For surfaces at which the Fermi energy is pinned by a high defect density inside of the band gap, the normalized conductivity exhibits a surface band gap equal to the bulk band gap (Fig.…”

Section: Wurtzite Ganmentioning

confidence: 99%

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Non‐polar group‐III nitride semiconductor surfaces

Eisele

Ebert

2012

Physica Rapid Research Ltrs

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The intrinsic structural and electronic properties of a surface are important for any further study or application of the material, especially when a high surface‐to‐volume ratio is obtained or the surface gets functionalized, as e.g. during growth. Due to increasing material quality over recent years, the first experimental results are now available for the non‐polar group‐III nitride semiconductor surface, which can be compared with previously reported theoretical calculations. While the reports on AlN and InN surfaces are still small in number, for GaN quite a lot of experimental results on the non‐polar surfaces were published on the intrinsic geometric and electronic properties, the defects, the decomposition, and the effect of impurities. Furthermore, the growth on non‐polar group‐III nitride surfaces is a new concept to reduce undesirable piezoelectric polarization in heterostructures and the side walls of wurtzite‐structured nano‐wires are formed mostly by non‐polar facets. Hence, we review the existing intrinsic structural and electronic properties of non‐polar surfaces of group‐III nitride semiconductors in this contribution.magnified imageThe three different non‐polar surfaces of III–V semiconductors with filled (bright green) and empty (bright red) dangling bonds: left (red) the (10\bar 10) surface of the wurtzite crystal structure, middle (blue) the (11\bar 20) surface of the wurtzite crystal structure, and right (green) the ({110}) surface of the zincblende structure. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Wurtzite Gansupporting

confidence: 78%

Section: Energetic Position Of the Fermi Levelsupporting

confidence: 64%

Section: Surface Unit Cellmentioning

confidence: 87%

“…2a) [18] as well as by atomically resolved scanning tunneling microscopy (STM) images (Fig. 2b) [18,25].…”

Section: Surface Unit Cellmentioning

confidence: 99%

Section: Wurtzite Ganmentioning

confidence: 99%

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Non‐polar group‐III nitride semiconductor surfaces

Eisele

Ebert

2012

Physica Rapid Research Ltrs

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Atomic‐Scale Origin of Long‐Term Stability and High Performance of p‐GaN Nanowire Arrays for Photocatalytic Overall Pure Water Splitting

et al. 2016

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The atomic-scale origin of the unusually high performance and long-term stability of wurtzite p-GaN oriented nanowire arrays is revealed. Nitrogen termination of both the polar (0001¯) top face and the nonpolar (101¯0) side faces of the nanowires is essential for long-term stability and high efficiency. Such a distinct atomic configuration ensures not only stability against (photo) oxidation in air and in water/electrolyte but, as importantly, also provides the necessary overall reverse crystal polarization needed for efficient hole extraction in p-GaN.

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Is the Fermi‐level pinned on InN grown surfaces?

Zhao

2014

Phys. Status Solidi C

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In this paper, we discuss the Fermi‐level pinning issue on InN grown surfaces, in particular the nonpolar m ‐planes. Detailed angle‐resolved X‐ray photoelectron spectroscopy studies show that for intrinsic InN nanowires the Fermi‐level on the nonpolar grown surfaces is located 0.1 to 0.2 eV below the conduction band edge, i.e., not pinned in the conduction band. This indicates that the commonly measured Fermi‐level pinning in the conduction band on nonpolar grown surfaces is not an intrinsic property of InN. Furthermore, our studies also suggest that surface states are positioned near the band edge and therefore do not contribute to the Fermi‐level pinning. This is consistent with recent theoretical and experimental studies. In the end, with the absence of the Fermi‐level pinning in the conduction band and surface electron accumulation, the unique electrical and optical properties of intrinsic InN nanowires are discussed, and compared with previously reported InN epilayers and n ‐type InN nanowires. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Surface states and origin of the Fermi level pinning on nonpolar GaN(11¯00) surfaces

Cited by 59 publications

References 18 publications

Non‐polar group‐III nitride semiconductor surfaces

Non‐polar group‐III nitride semiconductor surfaces

Atomic‐Scale Origin of Long‐Term Stability and High Performance of p‐GaN Nanowire Arrays for Photocatalytic Overall Pure Water Splitting

Is the Fermi‐level pinned on InN grown surfaces?

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