Surfactants: Perfect heteroepitaxy of Ge on Si(111)

Abstract

Abstract. The hetero growth of Ge on Si results in formation of 3D clusters with an uncontrolled defect struc-

Mechanisms of Si and Ge diffusion on surfactant terminated (111) silicon and germanium surfaces

“…The successful growth of thick and smooth Ge layers on Bi-terminated Si(111), stands as a prominent example and a landmark in Si/Ge epitaxy [4]. Sb and Bi are among the most popular surfactants used to control the growth mode of Si and Ge on Si(111) [5,6]. Moreover, by using Bi as a terminating layer on a Ge/Si(111) surface, it is possible to distinguish between Si and Ge topmost layers through a scanning tunneling microscope (STM) [2,7,8].…”

Direct observation of reconstruction induced changes of surface stress for Sb on Si(111)

“…Then only structural, not thickness generated, stress effects should be observed. Furthermore, antimony is one of the most important surfactants [3] for Ge growth on silicon [4], and devices built with this technology have shown exceptional performance [5]. The atomic structure of the initially Sb covered Si(111) surface is likely to affect Ge growth [6].…”

Influence of interface reconstruction on the formation and superconductive properties of metastable Pb-Ga alloy films

“…The surface reconstruction can be altered or eliminated by deposition of (sub)-monolayer (ML) amounts of a third species, prior to thin film deposition. Such template modification can facilitate smooth layer growth through surfactant 11,12 or interfactant action 13 or it can be used to control the band offset or Schottky barrier at the interface. 8,14,15 In this report, we show how the modification of a Si(111)-(7 × 7) template into a Si(111)-(…”