Switching performance of 65 V vertical N-channel FLYMOSFETs

Théolier, Loïc; Isoird, Karine; Tranduc, H.; Morancho, Frédéric; Roig, J.; Weber, Yann; Stefanov, E.; Reynes, J.-M.

doi:10.1016/j.mejo.2007.11.009

Microelectronics Journal

2008

DOI: 10.1016/j.mejo.2007.11.009

|View full text |Cite

Switching performance of 65 V vertical N-channel FLYMOSFETs

Loïc Théolier

Karine Isoird

H. Tranduc

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2009

2015

Publication Types

Select...

Article2

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

(1 citation statement)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, the SOHMT device is expected to show higher C GS and lower C GD as compared to the conventional device. To study these effects we have performed the gate charging transient analysis [17][18][19][20] using mixed mode simulations in ATLAS device simulator. We have connected a 10 μA constant current source at the gate of both the devices and studied the resulting changes in gate to source voltages (V GS ) as shown in Fig.…”

mentioning

confidence: 99%

A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance

Saxena

Kumar

2009

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

In this brief, we propose a new stepped oxide heteromaterial trench power MOSFET with three sections in the trench gate (an N + poly gate sandwiched between two P + poly gates) and having different gate oxide thicknesses (increasing from source side to drain side). The different gate oxide thickness serves the purpose of simultaneously achieving the following: 1) a good gate control on the channel charge and 2) a lesser gate-to-drain capacitance. As a result, we obtain higher transconductance as well as reduced switching delays, making the proposed device suitable for both RF amplification and high-speed switching applications. In addition, the sandwiched gate with different work-function gate materials modifies the electric field profile in the channel, resulting in an improved breakdown voltage. By using 2-D simulations, we have shown that the proposed device structure exhibits about 32% enhancement in breakdown voltage, 25% reduction in switching delays, 20% enhancement in peak transconductance, and 10% reduction in figure of merit (product of ON-resistance and gate charge) as compared to the conventional trench-gate MOSFET.

show abstract

mentioning

confidence: 99%

A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance

Saxena

Kumar

2009

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

Investigation of laterally single-diffused metal oxide semiconductor (LSMOS) field effect transistor

Bansal

Kumar

2015

Current Applied Physics

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Switching performance of 65 V vertical N-channel FLYMOSFETs

Cited by 2 publications

References 7 publications

A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance

A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance

Investigation of laterally single-diffused metal oxide semiconductor (LSMOS) field effect transistor

Contact Info

Product

Resources

About