Synchrotron X-ray topographic study of strain in silicon wafers with integrated circuits

Karilahti, M.; Tuomi, T.; Taskinen, M.-R.; Tulkki, Jukka; Lipsanen, Harri; McNally, Patrick J.

doi:10.1007/bf03040971

Cited by 7 publications

(5 citation statements)

References 4 publications

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“…Accordingly, the deformation of crystal planes in the substrate was the largest at the edges of the mask. This conclusion agrees very well with results on computer simulation of stress distribution in thermally oxidised Si wafer [17].…”

Section: Effect Of the Mask On Properties Of The Elo Layerssupporting

confidence: 91%

Epitaxial Lateral Overgrowth - a Tool for Dislocation Blockade in Multilayer Systems

Żytkiewicz

1998

Acta Phys. Pol. A

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Results on epitaxial lateral overgrowth of GaAs layers are reported. The methods of controlling the growth anisotropy, the effect of substrate defects filtration in epitaxial lateral overgrowth procedure and influence of the mask on properties of epitaxial lateral overgrowth layers will be discussed. The case of GaAs epitaxial lateral overgrowth layers grown by liquid phase epitaxy on heavily dislocated GaAs substrates was chosen as an example to illustrate the processes discussed. The similarities between our results and those reported recently for GaN layers grown laterally by metallorganic vapour phase epitaxy will be underlined.

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Section: Effect Of the Mask On Properties Of The Elo Layerssupporting

confidence: 91%

Epitaxial Lateral Overgrowth - a Tool for Dislocation Blockade in Multilayer Systems

Żytkiewicz

1998

Acta Phys. Pol. A

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“…It is worth noting that the BRSTs of Fig. 3(a)-(c) are similar to the transmission section topographs of similar silicon wafers with integrated circuits reported in [35]. In [35] the strain field contrast was compared with the calculated map of radial strain field near and below an oxide edge.…”

Section: Resultssupporting

confidence: 55%

“…3(a)-(c) are similar to the transmission section topographs of similar silicon wafers with integrated circuits reported in [35]. In [35] the strain field contrast was compared with the calculated map of radial strain field near and below an oxide edge. The topographic image can be explained qualitatively with the aid of an orientational contrast resulting from misorientated lattice planes.…”

Section: Resultsmentioning

confidence: 62%

Mapping of mechanical, thermomechanical and wire-bond strain fields in packaged Si integrated circuits using synchrotron white beam X-ray topography

McNally

Rantamäki²,

Tuomi³

et al. 2001

IEEE Trans. Comp. Packag. Technol.

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Abstract-Thermal processing steps used during the production of packaged integrated circuits can lead to severe thermomechanical stresses. In addition, the process of bonding wires to contact pads can also lead to strain field generation. A feasibility study using the application of white beam synchrotron x-ray topography to packaged erasable programmable read-only memory (EPROM) Si integrated circuits (ICs) has been undertaken in order to produce maps of the strain fields induced by such processing steps. This technique provides depth-resolved mapping with spatial resolutions currently in the region of 5-10 m throughout the entire mapping volume. Furthermore, the use of different experimental geometries allows the user to nondestructively probe the strain fields present at the wafer surface right through to the back side.

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“…For this study the probed wafers were exposed to aluminium removal to prevent the generation of x-ray induced fluorescent radiation from the metal in the synchrotron x-ray topographs. Later, it was determined that the large streaks and enhanced intensity observed in the x-ray synchrotron images are caused by the strain gradients and orientational contrast due to kinematical diffraction [17,18], rather than by any fluorescence. Also, orientational contrast can cause images, or parts of them to be projected outside of the image of the wafer itself [19,20].…”

Section: Sample Preparationmentioning

confidence: 99%

“…Sometimes only strong doping itself is able to cause lattice mismatch and strain [15]. The silicon-oxide interface produces strain [17], which can lead to the formation of defects, dislocations and stacking faults near the wafer surface. The synchrotron x-ray topographs in figure 3 show only the wafer surface without any Pendellösung fringes.…”

Section: Image Contrast Considerationsmentioning

confidence: 99%

Integrated circuit process control monitoring (PCM) data and wafer yield analysed by using synchrotron x-ray topographic measurements

Karilahti

Tuomi

McNally

2002

Semicond. Sci. Technol.

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This study focuses on using synchrotron x-ray topography to study fully processed silicon wafer lots with varying, though, low average yields. The electrical circuits were fabricated in a mixed-signal complementary metal-oxide semiconductor (CMOS) process. Synchrotron x-ray section topographs are analysed with image processing software written entirely for this study. The software reduces image data by encoding the relevant factors into curve feature parameters, in order to quantify the strain gradients and defect factors present in the images. This information is then correlated against the integrated circuit process control monitoring (PCM) data and the yield, i.e. the electrical semiconductor process parametric values of the wafers. Several image features extracted from the synchrotron x-ray topographs show a strong correlation with certain PCM parameters, e.g. PMOS transistor threshold voltage, polysilicon sheet resistance and N − contact chain sheet resistance, rather than with others, e.g. NMOS breakdown voltage. A positive correlation between good yield and strong near-surface strain gradient is found.

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Synchrotron X-ray topographic study of strain in silicon wafers with integrated circuits

Cited by 7 publications

References 4 publications

Epitaxial Lateral Overgrowth - a Tool for Dislocation Blockade in Multilayer Systems

Epitaxial Lateral Overgrowth - a Tool for Dislocation Blockade in Multilayer Systems

Mapping of mechanical, thermomechanical and wire-bond strain fields in packaged Si integrated circuits using synchrotron white beam X-ray topography

Integrated circuit process control monitoring (PCM) data and wafer yield analysed by using synchrotron x-ray topographic measurements

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