Synthesis and characterization of conductive titanium monoxide films. Diffusion of silicon in titanium monoxide films

Grigorov, K. G.; Grigorov, G.; Drajeva, L.; Bouchier, D.; Sporken, R.; Caudano, R.

doi:10.1016/s0042-207x(98)00149-3

Cited by 40 publications

(22 citation statements)

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“…Due to its interesting chemical, electrical and optical properties [7,8] it has been widely used in many application like solar cells [9], photocatalysis [10], gas sensor [11]. Also, because of its low electrical resistivity, TiO2 is an interesting material for microelectronic devices [12].The TiO2 thin film can be fabricated using various methods, like chemical vapor deposition (CVD), ion beam deposition, sol gel dip, plasma enhance chemical vapor deposition, RF magnetron sputtering, and DC magnetron sputtering [13,15] Since DC magnetron sputtering is a more controllable deposition technique that provides more uniform coated thin layers [16], in our study we fabricated TiO2 thin film samples using this method. TiO2 exists in 3 different crystal phases: rutile (tetragonal), anatase (tetragonal), and brookite (orthorhombic) [17,18].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films

Asalzadeh¹,

Yasserian²

2019

Semiconductors

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This paper presents the effect of different cooling rate after annealing on structural and electrical properties of TiO2 thin films. Titanium dioxide thin film was deposited on a silicon substrate using DC magnetron technique. After annealing TiO2 thin films at 600 o C, to investigate the effect of different cooling rates on TiO2 thin films, samples were cooled down from 600 o C to the room temperature under 3 different rates: 2 o C/min, 6 o C/min and 8 o C/min. The Surface morphology, crystal structure, and electrical property of samples were characterized by atomic force measurement (AFM), X-ray diffraction (XRD) and Four-point probe (FPP) technique. It is found that the rate of decreasing temperature after annealing can affect the morphology structure and electrical resistivity of titanium dioxide. Sample with 2 o C/m has the biggest grain size, and more electrical resistivity while the smallest grain size and lowest electrical resistivity belong to sample with 8 o C/m cooling rate. 1.INTRODUCTION:TiO2 as one of the most thermally and chemically stable semiconductor has been attractive for many researchers [1][2][3][4][5][6]. Due to its interesting chemical, electrical and optical properties [7,8] it has been widely used in many application like solar cells [9], photocatalysis [10], gas sensor [11]. Also, because of its low electrical resistivity, TiO2 is an interesting material for microelectronic devices [12].The TiO2 thin film can be fabricated using various methods, like chemical vapor deposition (CVD), ion beam deposition, sol gel dip, plasma enhance chemical vapor deposition, RF magnetron sputtering, and DC magnetron sputtering [13,15] Since DC magnetron sputtering is a more controllable deposition technique that

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Section: Introductionmentioning

confidence: 99%

The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films

Asalzadeh¹,

Yasserian²

2019

Semiconductors

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“…Additionally, titanium monoxide can be used in microelectronics as a diffusion barrier against the inter-diffusion of Al and Si [23,24]. Very wide homogeneity regions, high vacancy content and ordering of vacancies give an opportunity to vary the properties of the material in wide limits.…”

Section: Introductionmentioning

confidence: 99%

Vacancies in ordered and disordered titanium monoxide: Mechanism of B1 structure stabilization

Kostenko

Lukoyanov

Zhukov

et al. 2013

Journal of Solid State Chemistry

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a b s t r a c tThe electronic structure and stability of three phases of titanium monoxide TiO y with B1 type of the basic structure have been studied. Cubic phase without structural vacancies, TiO, and two phases with structural vacancies, monoclinic Ti 5 O 5 and cubic disordered TiO 1.0 , was treated by means of firstprinciples calculations within the density functional theory with pseudo-potential approach based on the plane wave's basis. The ordered monoclinic phase Ti 5 O 5 was found to be the most stable and the cubic TiO without vacancies the less stable one. The role of structural vacancies in the titanium sublattice is to decrease the Fermi energy, the role of vacancies in the oxygen sublattice is to contribute to the appearance of Ti-Ti bonding interactions through these vacancies and to reinforce the Ti-Ti interactions close to them. Listed effects are significantly pronounced if the vacancies in the titanium and oxygen sublattices are associated in the so called "vacancy channels" which determine the formation of vacancy ordered structure of monoclinic Ti 5 O 5 -type.

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“…Martev [2] and Grigorov et al [3] suggested that conductive TiO could be used as a thin film material for applications in microelectronic layered structures. Recently, increasing attention has been devoted to the investigation of the light absorption properties of titanium oxide in the visible light range.…”

Section: Introductionmentioning

confidence: 99%

Optical constants of titanium monoxide TiO thin films

Assim

2008

Journal of Alloys and Compounds

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Synthesis and characterization of conductive titanium monoxide films. Diffusion of silicon in titanium monoxide films

Cited by 40 publications

References 0 publications

The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films

The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films

Vacancies in ordered and disordered titanium monoxide: Mechanism of B1 structure stabilization

Optical constants of titanium monoxide TiO thin films

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