Synthesis and polishing characteristics of a novel green GO/diamond hybrid slurry under ultrasonic technology

Approach: developing nano/sub-micron diamond slurry technology for enhanced precision polishing of optoelectronic materials

“…Achieving precise control over surface morphology and atomic-level surface roughness is crucial for determining the performance and reliability of these devices. [6][7][8][9][10][11][12] However, the fabrication of SiC wafers presents challenges due to its inherent hardness and chemical stability. Conventional chemical mechanical polishing (CMP) techniques have been widely employed for achieving surface planarization and controlling atomic-level surface roughness.…”

“…The rapid development of various electronic devices has led to an increased demand for high-quality and defect-free semiconductor wafers and epitaxial substrates. Achieving precise control over surface morphology and atomic-level surface roughness is crucial for determining the performance and reliability of these devices 6 – 12 However, the fabrication of SiC wafers presents challenges due to its inherent hardness and chemical stability.…”

Unprecedented atomic surface of silicon induced by environmentally friendly chemical mechanical polishing

“…10,15 Inspired by this, green chemical mechanical polishing has attracted increasing attention for its environmental protection and mechanochemical collaborative process. [19][20][21] The expected CMP processing effect is based on the green environmental protection using friendly weak acids, weak bases, and even food grade reagents to prepare polishing slurry. Recently, some researchers have polished many materials and components (such as sapphire, diamond, and oxygen-free copper) with a green CMP process, and obtained extremely low surface roughness and ultra-smooth surface.…”