Synthesis of p-type phosphorus doped ZnSe nanowires and their applications in nanodevices

Su, Qing; Zhang, Yanghua; Li, Shanying; Du, Lingzhi; Zhao, Hongliang; Liu, Xiangyun; Li, Xiaoyan

doi:10.1016/j.matlet.2014.10.156

Cited by 17 publications

(12 citation statements)

References 18 publications

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“…p‐Type doping is an efficient approach to tune the electrical properties of these two semiconductors. Similarly to ZnO, group V and group I elements are excellent candidates for ZnSe as p‐type dopants . While for AlN, magnesium (Mg), a typical group II element, has been used to prepare p‐type AlN with satisfying properties.…”

Section: Common P‐type Semiconductor Materialsmentioning

confidence: 99%

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

et al. 2018

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Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.

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Section: Common P‐type Semiconductor Materialsmentioning

confidence: 99%

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

et al. 2018

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“…Pöykkoö has shown that doubly charged cation vacancies, , are favored in undoped, n-type ZnSe. Furthermore, the resistivity of ZnSe nanowire-based devices has been observed to range between tens of m m ,, to over 1000 m. , This wide discrepancy is attributed to the presence of point defects that compensate and scatter carriers and to the position of the Fermi level, which determines the fraction of ionized defects implicated in transport.…”

mentioning

confidence: 99%

“…15 Poÿkkoö1 6 has shown that doubly charged cation vacancies, −− V Zn , are favored in undoped, n-type ZnSe. Furthermore, the resistivity of ZnSe nanowirebased devices has been observed to range between tens of mΩ•m 12,17,18 to over 1000 Ω•m. 19,20 This wide discrepancy is attributed to the presence of point defects that compensate 21 and scatter 22 Even in high-purity growth conditions, native defects arising from stoichiometric deviations exist, which can be observed by studying the low-temperature photoluminescence (PL) spectrum.…”

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confidence: 99%

Fingerprinting Electronic Structure in Nanomaterials: A Methodology Illustrated by ZnSe Nanowires

et al. 2019

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Characterizing point defects that produce deep states in nanostructures is imperative when designing next-generation electronic and optoelectronic devices. Light emission and carrier transport properties are strongly influenced by the energy position and concentration of such states. The primary objective of this work is to fingerprint the electronic structure by characterizing the deep levels using a combined optical and electronic characterization, considering ZnSe nanowires as an example. Specifically, we use low temperature photoluminescence spectroscopy to identify the dominant recombination mechanisms and determine the total defect concentration. The carrier concentration and mobility are then calculated from electron transport measurements using single nanowire field effect transistors, and the measured experimental data were used to construct a model describing the types, energies, and ionized fraction of defects and calculate the deviation from stoichiometry. This metrology is hence demonstrated to provide an unambiguous means to determine a material’s electronic structure.

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“…In addition, unlike ZnO, ZnSe is also reported as a p-and n-type semiconductor, although it is still more difficult to realize an effective p-type than n-type ZnSe semiconductor. 12 Till date, various ZnSe nanostructures have been investigated, 13−16 and many different methods have also been reported to prepare ZnSe films, such as chemical bath deposition, 17 magnetron sputtering, 18 coprecipitation method, 19 molecular beam epitaxy, 20 thermal evaporation, 21 electrodeposition, 22 pulsed laser deposition technique, 23 and electron-beam evaporation. 24 Among these preparation methods, electron-beam evaporation has the advantages of economy of materials, convenient operation, and environmental friendliness.…”

Section: Introductionmentioning

confidence: 99%

Cadmium-Free Nanostructured Multilayer Thin Films with Bright Blue Photoluminescence and Excellent Stability

Luo

Wang

et al. 2021

ACS Omega

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Cadmium-based quantum dots (Cd-QDs) show decent performance for lighting applications due to good color saturation, an excellent high quantum yield, and a narrow full-width at half-maximum. However, the intrinsic toxicity of Cd is a major hindrance to related applications, especially in the biological field. ZnSe, with a band gap of 2.7 eV and lower toxicity than CdSe or CdS, is promising as a blue luminescent material. Herein, we mainly reported the preparation and luminescence properties of nanostructured ZnSe/ZnS multilayer thin films with bright blue photoluminescence. The photoluminescence spectrum contained two emission peaks, located at about 442 nm (near band-edge emission) and 550 nm (defect-related emission), respectively. More importantly, the photoluminescence performance and decay were explored in detail through low-temperature photoluminescence spectra. In addition, the nanostructured ZnSe/ZnS multilayer thin films showed favorable photostability.

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Synthesis of p-type phosphorus doped ZnSe nanowires and their applications in nanodevices

Cited by 17 publications

References 18 publications

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

Fingerprinting Electronic Structure in Nanomaterials: A Methodology Illustrated by ZnSe Nanowires

Cadmium-Free Nanostructured Multilayer Thin Films with Bright Blue Photoluminescence and Excellent Stability

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