System architecture choices for an advanced mask writer (100 to 130 nm)

Chakarian, Varoujan; Raymond, Frederick; Sauer, Charles A.; Babin, S.; Innes, Robert; Sagle, A.; Hofmann, Ulrich; Shamoun, Bassam; Trost, David; Ghanbari, Abe; Abboud, Frank E.

doi:10.1117/12.373318

Cited by 2 publications

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, amount of heat delivered to the resist and substrate during e-beam exposure is proportional to the acceleration voltage. It was reported that a 50 kV e-beam could penetrate into substrate several microns, which resulted in the substrate absorbing 25× more energy than a 10 kV e-beam [139]. This energy absorption by the lower substrate causes resist CD and image placement errors.…”

Section: Maskless Lithographymentioning

confidence: 98%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

View full text Add to dashboard Cite

In this paper, next-generation lithography (NGL) for the 22 and 16 nm technology nodes and beyond is reviewed. A broad range of topics, including history, technologies, critical challenges, and the most plausible candidates are discussed. The 22 and 16 nm technology nodes rely on NGL. NGLs have been extensively studied. Because of technological issues, the semiconductor industry has stopped pursuing several NGLs, such as X-ray proximity lithography, ion projection lithography, and scattering with angular limitation projection electron lithography. Currently, the primary candidate technologies are extreme ultraviolet lithography (EUVL), maskless lithography (ML2), and nanoimprint lithography (NIL), with EUVL being the leading candidate. Since EUVL was first proposed in 1988, many studies have been conducted. Currently, there is no "show stopper" for EUVL. Moreover, challenges are present in almost all aspects of EUVL technology. Almost all primary semiconductor manufacturing companies plan to implement commercial pre-production step-and-scan exposure tools in 2011. However, EUVL power at an intermediate focusing level has not yet met the volume manufacturing requirements. EUVL resists have been significantly improved recently, but there is still a critical need to meet requirements on resolution, line width roughness, and sensitivity. Creating a defect-free EUVL mask is another obstacle to the application of EUVL. ML2 and NIL, like EUVL, have also undergone significant progress recently, but throughput, defect control, and cost remain the critical impediments for practical application.

show abstract

Section: Maskless Lithographymentioning

confidence: 98%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

View full text Add to dashboard Cite

show abstract

Implementation of real-time proximity effect correction in a raster shaped beam tool

Boegli

Johnson

Kao

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested inProximity effect correction using pattern shape modification and area density map for electron-beam projection lithography J.Proximity effect correction using pattern shape modification and area density map Accuracy and efficiency in electron beam proximity effect correction Dose, shape, and hybrid modifications for PYRAMID in electron beam proximity effect correction J. Vac. Sci. Technol. B 15, 2303 (1997 10.1116/1.589634 Design and implementation of a real-time hierarchical parallel postprocessor for 100 keV electron beam lithography J.

show abstract

System architecture choices for an advanced mask writer (100 to 130 nm)

Cited by 2 publications

References 0 publications

Next-generation lithography for 22 and 16 nm technology nodes and beyond

Next-generation lithography for 22 and 16 nm technology nodes and beyond

Implementation of real-time proximity effect correction in a raster shaped beam tool

Contact Info

Product

Resources

About